news digest ♦ Power Electronics operation.
The transistors have already been tested for applications in battery chargers for electric cars, and, together with KACO new energy GmbH, also in photovoltaic inverters. The following partners also cooperate with Fraunhofer IAF in this research project, IXYS Semiconductor GmbH, United Monolithic Semiconductors GmbH, Universität Erlangen-Nürnberg, RWTH Aachen.
New opportunities for GaN technology
Whereas silicon-based devices are slowly reaching their physical limits, gallium nitride technology offers new opportunities for power electronics. Gallium nitride devices can be operated under higher voltages and temperatures than conventional power devices based on silicon.
This allows a reduction of the cooling efforts; compact, light-weight and cost-effective voltage converters become possible. In comparison with silicon transistors, gallium nitride allows to increase the switching frequency by at least a factor of three.
Due to the higher breakdown strength and power density of the material, the devices are considerably more efficient than their silicon equivalent. This will reduce the energy consumed in order to charge the battery of an electric car or to feed in energy from solar parks into the grid.
“Besides using GaN transistors in electromobility and photovoltaics, they will also be able to increase efficiency and save energy in household applications, production technology or in generators for plasma and laser systems. Our continuous goal will be to increase reliability, thermal stability and switching frequency in order to use the full potential offered by gallium nitride technology,” explains Patrick Waltereit, project leader at Fraunhofer IAF.
Anadigics unveils InGaP power amplifier series
The company’s ProVantage indium gallium phosphide PAs are suited to 3G & 4G high power mode efficiency
Anadigics has introduced the new ProVantage power amplifier (PA) product family.
The company’s ProVantage solutions deliver excellent efficiency and linearity to extend battery life and ensure high data throughput in LTE, WCDMA/HSPA, CDMA/ EVDO, and TD-SCDMA mobile devices.
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www.compoundsemiconductor.net October 2013
“We recognise the tremendous diversity in mobile device requirements, ranging from voice-centric feature phones to power-hungry smartphones and tablets,” says Navi Miglani, product marketing director of Cellular Products at Anadigics.
“Our new ProVantage power amplifiers are optimised to deliver outstanding value by providing a best-in-class combination of high power mode efficiency, linearity, and reduced system costs. This, addition to our world-class cellular products portfolio, complements our industry- leading ProEficient and ProEficient-Plus solutions and enables Anadigics to target the needs of a wider range of market segments,” Miglani continues.
Anadigics ProVantage power amplifiers leverage the company’s InGaP-Plus technology to achieve outstanding performance and integration. These power amplifiers help extend battery life by offering three selectable bias modes that optimise efficiency for low, medium and high output power levels, as well as a shutdown mode with low leakage current.
ProVantage solutions are also designed for use with an external switch mode power supply (SMPS), such as average power tracking (APT), to further increase efficiency and reduce current consumption at low and medium operating powers.
Anadigics’ ProVantage power amplifiers provide world- class linearity to ensure stable cellular connectivity and high data throughput. The complete family of ProVantage solutions are offered in compact 3 mm x 3 mm x 0.9 mm packages and feature internal voltage regulation to save valuable PCB space.
Details of the packages are shown in the table below.
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