news digest ♦ Power Electronics The table below outlines typical performance:


the trends which are driving technological advances in semiconductors for electric and hybrid vehicle applications.


Comments Girvan Patterson, CEO of GaN Systems “EHVs are full of power electronics, from battery management, auxiliary power, braking, valve timing, cruise control, security systems, instrument clusters - all of which are currently suffering the limitations imposed by silicon, as it doesn’t switch quickly or cope with elevated temperatures.”


Evaluation boards of MAGX-001090-600L00 are available from stock and samples may be ordered now.


New GaN power devices to drive electric & hybrid vehicle technology


GaN Systems will explain how technology and trends in wide-bandgap gallium nitiride devices means smaller, lighter and more efficient electronics


GaN Systems, a developer of GaN power switching semiconductors, is presenting a paper on new wide- bandgap semiconductors and their role in transforming automotive power electronics.


According to IMS Research, manufacturers are currently designing vehicles to be launched onto the market in 2018. This coincides with the timeframe leading forecasters are predicting that GaN semiconductors will attain price parity with silicon devices. This development will overcome the limitations of silicon and transform power electronics in EHVs.


Julian Styles, Director Business Development USA, will join speakers from leading players in the EHV industry for the 3-day conference. Styles will explain the technological advances in semiconductor materials which herald the replacement of traditional silicon in power converters for new generation electric and hybrid vehicles.


The audience will gain insight into how wide-bandgap power semiconductors based on GaN bring benefits including greater efficiency, weight reduction and lower cost to power electronics for EHVs.


He will also give the audience a valuable insight into devices available now and in the near future, plus share


122 www.compoundsemiconductor.net October 2013


He continues,” New generation GaN and SiC semiconductors overcome these difficulties and are lighter, smaller and easier to package. These new devices will lead to dramatic improvements in automotive power electronics and present a major opportunity for the industry.”


MACOM releases high power C-Band GaAs MMIC power amplifier


The 8W plastic packaging power amplifier operating between the 5.2 - 5.9 GHz frequency band offers customers a small sized, fully matched solution


M/A-COM Technology Solutions has launched a new high power amplifier that is ideally suited for C-Band radar and communication applications.


MAAP-011027


The MAAP-011027 is ideal for customers who need a fully matched, small size and simplified packaged solution for high power pulsed applications.


Operating over the 5.2 - 5.9 GHz frequency bandwidth, the device is a two stage, 8 W saturated C-band power amplifier with 37 percent power added efficiency.


The MAAP-011027 is packaged in a lead free 5mm x 5mm 20 lead PQFN and offers a fully matched solution


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