news digest ♦ Power Electronics
higher efficiency systems by implementing simpler, less expensive cooling systems.
“Rohm’s SiC MOSFETs help customers save board space, simplify layout, and reduce BOM costs,” says David Doan, Senior Product Marketing Manager at Rohm Semiconductor. “Importantly, Rohm’s SiC MOSFETs are free from issues related to gate oxide breakdown, Vth stability, and degradation of the body diode during reverse conduction.”
The SCT2080KE and SCH2080KE MOSFETs are available now in mass production quantities. Rohm Semiconductor has plans to expand its SiC MOSFET product line with lower on resistance and higher breakdown voltage models.
Toshiba extends SiC Schottky barrier diode family
The firm’s latest silicon carbide power device is suited to power factor correction circuits, photovoltaic inverters and uninterruptible power supplies
Toshiba Corporation is expanding its portfolio of 650V SiC Schottky barrier diodes (SBD) with the addition of a 10A product to the existing line-up of 6A, 8A and 12A products.
them the ideal replacements for silicon fast-recovery diodes, According to Toshiba, SiC SBDs improve power supply efficiency by as much as 50 percent.
What’s more, SiC power devices offer more stable operation than current silicon devices - even at high voltages and currents - as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and their industrial applications range from servers to inverters.
EPC expands eGaN FET portfolio with 150 V power transistor
The new gallium nitride power transistor delivers high frequency switching for exceptional performance in DC- DC power conversion and Class D Audio applications
Efficient Power Conversion Corporation (EPC) is introducing the EPC2018 as the newest member of its family of enhancement mode gallium nitride power transistors.
The EPC2018 is a 5.76 mm2, 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package.
Toshiba SiC Schottky Barrier Diode Mass production shipments will start from today.
SiC is a wide-bandgap semiconductor and SiC SBDs provide high breakdown voltage that has never been possible with silicon SBDs. Being unipolar devices, SiC SBDs have very short reverse recovery time and temperature-independent switching behaviour, making
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www.compoundsemiconductor.net October 2013
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2018 is much smaller and has many times superior switching performance.
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