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NEWS REVIEW


RFMD to convert all GaN processes to 6-Inch GaN-on-SiC


RFMD has introduced what it says is the world’s first 6-inch GaN-on-SiC wafers for manufacturing RF power transistors for both military and commercial use.


The company is converting all GaN production and development to 6-inch diameter wafers using its existing high- volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market.


“We are pleased to introduce the industry’s first 6-inch GaN-on-SiC RF technology on RFMD’s existing high- volume 6-inch GaAs manufacturing line,” says Bob Bruggeworth, president and CEO of RFMD.


“This merging of production of GaN and GaAs is part of our ‘GaN-in-GaAs Fab’ strategy to repurpose existing fab capacity to better address growth


opportunities from innovative new GaN- based products.”


According to industry analyst firm Strategy Analytics, the GaN microelectronics market is expected to more than triple to $334 million by 2017, representing a compound annual growth rate (CAGR) of 28 percent.


This market growth is led by growth in both military (radar, electronic warfare, communications) and commercial (power management, cellular, CATV, land mobile radios) applications.


“By leveraging our technology leadership and high-volume expertise in 6-inch GaAs production, RFMD will now be able to add 6-inch GaN capabilities to deliver new RF Power products that we expect will accelerate revenue growth in our communications, CATV, power


Oclaro mass producing narrow linewidth InP tuneable lasers


OCLARO has started volume production of its next generation tuneable laser platform.


This new narrow linewidth micro-iTLA (Integrable Tunable Laser Assembly) is specifically targeted for coherent systems, where a high performance laser is needed for both the transmission and the local oscillator laser.


The Oclaro micro-iTLA features high optical output power and off-grid tuning suitable for applications in 100G and next generation 200G coherent networks based on the PM-QPSK and 16-QAM modulation formats.


“100G coherent shipments are increasing dramatically, and we expect that shipments in 2014 will be above 40,000 ports,” says Daryl Inniss, Practice Leader for Components at Ovum Ltd.


“Each of these coherent ports will require one or two narrow linewidth lasers, and we’re excited to see component manufacturers such as Oclaro support


the growth of 100G by introducing and ramping production of components such as this narrow linewidth micro-iTLA.”


“We are pleased to have successfully completed qualification, and are actively engaged with multiple customers and have completed several design-wins with our new tunable laser platform,” adds Yves Hardy, VP of Transmission Product Management at Oclaro.


“With this product offering, Oclaro is simplifying the migration to coherent at both the line card and module level, and the technology is also enabling next generation 100G and 200G pluggable form factors.”


The Oclaro micro-iTLA is compliant to the OIF Multi-Source Agreement, and incorporates a form factor which is three times smaller than the standard iTLA and has a significantly reduced power consumption, both of which enable further size reductions in coherent modules to be supported while reducing thermal concerns.


6 www.compoundsemiconductor.net October 2013 Oclaro Narrow Linewidth Micro-iTLA


The ultra-high optical power output, combined with power and frequency fine tuning, gives greater flexibility to network designers.


The reliability of the InP chip technology and packaging allows customers to be confident that they are manufacturing high reliability systems.


This platform is part of the roadmap of next generation products that builds on the legacy of Oclaro’s InP portfolio that is used extensively in the market today.


The micro-iTLA has been shipping to key customers throughout 2013. Oclaro is currently ramping micro-iTLA production to support market demand in the fourth quarter of 2013.


conversion, radar, jamming, aerospace and open foundry businesses,” comments Jeff Shealy, vice-president of RFMD Power Broadband.


GaN technology supports broad frequency bandwidths and high breakdown voltages in a small area. A 6-inch GaN wafer offers 2.5-times more useable area over competing 4-inch GaN wafer platforms currently available, resulting in 2.5 times more RF power devices per wafer.


Larger area-per-wafer and subsequent lower cost per unit area (in dollars per square millimetre) is critical to enabling affordable, high performance power monolithic microwave ICs (MMICs) for military and commercial applications.


RFMD expects to complete qualification of its 6-inch GaN platforms in 2014.


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