news digest ♦ Power Electronics
Emcore awarded for III-V multi-junction solar cells
The AURP has honoured Emcore for its III-v solar cell technology development
Emcore Corporation, a provider of compound semiconductor-based components and subsystems for the fibre optics and solar power markets, has received the Association of University Research Parks’ (AURP) Innovation Award.
The firm was honoured for its pioneering work in the development and commercialisation of high-efficiency III-V multi-junction solar cells for space and terrestrial solar power applications.
Emcore started its efforts to design and manufacture radiation-hardened, high-efficiency multi-junction solar cells for satellite and space power applications at the Sandia Science & Technology Park (SS&TP) in early 1998.
The research and development team led by Hong Hou, who had come to Emcore from Sandia National Laboratories, licensed background intellectual properties related to multi-junction solar cells from Sandia, the Air Force Research Laboratory, and the National Renewable Energy Laboratory.
From there Emcore formed its PV division in Albuquerque, New Mexico and built its 160,000 square foot state-of-the-art semiconductor wafer fabrication facility. Today that facility is one of the largest multi- junction solar cell manufacturing plants in the world.
Emcore’s high-efficiency multi-junction solar cells have led the way in the transformation of the space solar power industry over the past 15 years. Emcore’s entry into the industry has advanced solar cell efficiency from 17 percent, the standard for silicon-based technology prior to 1998, to 37 percent conversion efficiency for its latest generation Inverted Metamorphic Multi-Junction (IMM) solar cells that are currently being introduced to volume production.
With the success of the commercialisation of high-efficiency multi-junction solar cells for space power applications, Emcore relocated its corporate headquarters from New Jersey to the SS&TP in Albuquerque in 2006.
“We are very pleased and honoured to receive the AURP’s Innovation Award for our work in multi- junction solar cell technology development and commercialization,” says Hong Hou.
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www.compoundsemiconductor.net October 2013 EPC8004
Cutting new ground for power transistors, these third generation devices have switching transition speeds in the sub nano-second range, making them capable of hard switching applications above 10 MHz.
Even beyond the 10MHz for which they were designed, these products exhibit very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.
“We are very excited about how our innovative new family of eGaN FETs will change the industry. These products take EPC and GaN transistor technology to a level of performance that enables applications that were previously beyond the capability of MOSFETs. We now have eGaN FETs that can be used in both power semiconductor and RF applications,” says Alex Lidow, EPC’s co-founder and CEO.
“I would also like to thank the Sandia National Laboratories and the SS&TP for their superb resources and support of our efforts from the very beginning. And, I would especially like to thank our employees in the PV division for their dedication and innovative work all these years, paving the way for Emcore’s success in the industry,” adds Hong Hou.
“Emcore is more than deserving of the AURP’s Innovation Award,” comments Jackie Kerby Moore, Executive Director of the SS&TP. “They are creating products used in the global marketplace, and they are doing most of that right here in the Sandia Science &Technology Par
EPC’s multiple GHz eGaN FETs blend RF with Power
Power systems and RF designers now have access to gallium nitride power transistors capable of amplification into the low GHz ranges not achievable with silicon
Efficient Power Conversion Corporation (EPC) has extended its family of high-speed, high performance transistors with the EPC8000 family of products.
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