Power Electronics ♦ news digest
Products in the family are available with on-resistance values from 125 mΩ through 530 mΩ, and three blocking voltage capabilities, 40 V, 65 V and 100 V. These new transistors have several new features that further enable designers to take full advantage of the high performance GaN FETs have to offer.
These features include reduction in QGD thereby reducing voltage transient switching losses, improved Miller ratio providing high dv/dt immunity, low inductance pads for improved connection to both gate and drain circuits, orthogonal current flow between the gate and drain circuits for enhanced CSI reduction, and a separate gate return connection also for enhanced CSI reduction.
Examples of applications benefiting from the low power, compact, high frequency EPC8000 family of devices include hard-switching power converters operating in the multi-megahertz range, envelope tracking in RF power amplifiers, highly resonant wireless power transfer systems for wireless charging of mobile devices.
The EPC9027 development board, featuring the EPC8007 devices and the LM5113 gate driver IC in a half bridge configuration, is available now. Additional development boards will be available to support designers in evaluating and incorporating other EPC8000 family products into their power conversion.
Evaluation units of the EPC8000 family of products are immediately available in 10-piece packs starting at $430 through Digi-Key Corporation.
GaN Systems and APEI win $2 million to revolutionise transportation
The US Department of Energy has provided the funding to the firms to design power-saving GaN (gallium nitride) and SiC (silicon carbide) semiconductors for next generation vehicles
funding from the $45 million US DoE programme.
The project is aimed at developing new vehicle technologies to improve fuel efficiency and reduce transportation costs.
The APEI-led team, also including Toyota Motor Engineering and Manufacturing North America Inc, the University of Arkansas National Centre for Reliable Electric Power Transmission and the US National Renewable Energy Laboratory, has been awarded $2 million as one of the 38 different projects the DoE is funding across the US.
The team will develop new electric motor traction drives for hybrid electric vehicles based on GaN and silicon carbide SiC power semiconductors. These new technologies will replace traditional silicon semiconductors in automotive power electronics to herald a new generation of highly efficient and lower cost systems.
Girvan Patterson, CEO of GaN Systems comments, ”We’re delighted to be part of the APEI team and to be collaborating on such an important programme. The DoE initiative is a very exciting opportunity for the industry. HEVs are full of power electronics for functions like battery management, auxiliary power, braking, instrument clusters and many more. Over the next few years we will see dramatic improvements in all these systems which will be designed into vehicles such as Toyota’s next generation Prius.”
MACOM launches first surface mount L-Band 90W GaN power module
A novel modular, SMT-optimised approach unlocks the full promise of gallium nitride in plastic for radar applications
M/A-COM Technology Solutions Inc. (MACOM) has announced the newest entry in its portfolio of GaN in Plastic packaged power products.
GaN Systems has partnered with Arkansas Power Electronics International (APEI) in a successful bid for
October 2013
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