NEWS REVIEW
Cree’s new XLamp LED arrays double lumen density
CREE has announced what it says is the industry’s fi rst High-Density (HD) LED Arrays - a breakthrough technology that doubles the system intensity of spot lights compared to previous arrays. The new HD class of CXA Arrays provide unrivalled lumen density, enabling reduction in system cost and power consumption. The fi rst HD Array, the CXA1520 LED, enables manufacturers to create a new generation of products that delivers the same intensity and light quality as 39-W ceramic metal halide (CMH) at up to 50 percent lower power.
“The new CXA1520 LED Array delivers an impressive amount of light from a small source. I have not seen another integrated array that can match this level of lumen density,” says Mark Groenke, VP of engineering at ConTech Lighting.
“The CXA1520 LED Array enables ConTech Lighting’s newest LED fi xtures to exceed the effi ciency and life of our ceramic metal halide fi xture offerings while maintaining intensity and colour quality.”
The High-Density Cree XLamp Array extends Cree’s CXA family to give lighting manufacturers a single integrated array family to address lighting applications from general-purpose fl oods to specialty
CXA1520 LED
retail spot lights. Cree XLamp CXA1520 LED Arrays deliver up to 3478 lumens at 33 watts, 85°C. Available in ANSI White and four-step EasyWhite binning, the new arrays feature 2700 K through 5000 K CCTs, with 70, 80 and 95-CRI options.
“We have several CXA1507 and CXA1512 LED array designs, and we’re excited that the new CXA1520 LED Array shares the same light-emitting size as the CXA1507 and CXA1512 LED Arrays,” says Tom Tang, chairman and CEO, Tons Lightology, Inc. “This allows us to address very-high output applications without changing the optics.”
New approach for solar cell material
CUBIC SiC may host a new approach for a highly effi cient solar cell material. Theory has shown that cubic SiC may act as a highly effi cient solar cell material if doped with boron. This has not been explored since this semiconductor material is challenging to produce.
The photovoltaic properties interests the Norwegian research organisation SINTEF which has landed a �0.9 million research grant in the Energy X programme that targets innovative energy concepts. The programme runs under the Norwegian Research Council that selected four projects having breakthrough character among 49 applications.
State of the art quality cubic SiC was shown by the Swedish researchers at
Linköping University last year using a method that they have developed. There are great challenges in keeping the stability of this material, and maintain quality while introducing dopants, says Mikael Syväjärvi that initiated the collaboration with the Norwegian organisation.
In Norway there is a lot of experience in solar cell technology, which matches our materials expertise, he adds about the partnership which includes the University of Oslo and Saint-Gobain Ceramic Materials AS. During the last three years, his research team has explored doped SiC for a white LED that has a pure white light and no need for rare earth metal, while at the same time being less infl uenced by the droop effect.
10
www.compoundsemiconductor.net October 2013
ABI: GaN to boost microwave RF power market
The gallium nitride power semiconductor market will grow to over $250 million by 2018. Spending on microwave RF power semiconductors has been kick-started by the availability of new GaN devices for 4 to 18 GHz.
Point-to-point communications, SATCOM, radars of all types and new industrial/medical applications will all benefi t by the introduction of these high-power GaN devices, fi nds market intelligence fi rm ABI Research. “While gallium arsenide devices are presently the backbone of microwave RF power it is gallium nitride that will drive growth going forward,” notes research director Lance Wilson. “GaN can operate at much higher voltages and at power levels that were diffi cult or impossible to reach using GaAs.”
In addition to the above mentioned application segments, microwave GaN is fi nally reaching the performance points that can start to seriously challenge travelling wave tube applications for new designs that have historically used the latter.
“Microwave RF Power Semiconductors” examines Microwave RF power semiconductor devices that have power outputs of greater than 3 watts and operate at frequencies of 4 to 18 GHz. This is a new study, which is part of ABI Research’s ongoing effort to track the major changes in the RF power industry.
With the current release, analysis of the six main vertical segments (C-Band GaAs, C-Band GaN, X-Band GaAs, X-Band GaN, Ku-Band GaAs, and Ku-Band GaN) is further expanded to 28 application sub- segments.
These fi ndings are part of ABI Research’s High-Power RF Active Devices Research Service , which also includes other Research Reports, Market Data, and analyst inquiry support.
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