Lasers ♦ news digest
The green gap (540-610nm) is a major obstacle in the development of high-efficiency solid state lighting applications. It’s well known that LEDs produced in the green region, between red and blue, have rapidly declining efficiency.
Green and yellow in the middle of the colour spectrum, known as the “green gap”, is a section of the light spectrum where devices made from either nitride or phosphide are inefficient and difficult to fabricate.
Meaglow says its reactor overcomes these difficulties by utilising its patent pending hollow cathode and low temperature growth process which is capable of growing the volatile compound of indium required to make green and yellow diodes.
Having a nitride device that emits strongly in the yellow is a monumental step forward for low temperature InGaN growth.
Meaglow also says the quality of InGaN produced by its technique is pioneering the industry. Results for this test device were presented to scientists in the nitride semiconductor research community at the recent ISSLED2012 conference held in Berlin, Germany.
The firm is now focused on commercialising its InGaN technology, and is looking for partners interested in creating next generation devices using the thick InGaN template layers.
Stuttgart University orders another Aixtron tool for laser research
The 3x2” MOCVD CCS reactor will be used for the growth of gallium arsenide solid state lasers and III-V materials on silicon
The University of Stuttgart has made a repeat order for Aixtron’s CCS (Close Coupled Showerhead) system that is capable of handling three 2-inch (3x2”) substrates at a time.
The system will be used by University of Stuttgart’s Institute of Semiconductor Optics and Functional Interfaces (Institut für Halbleiteroptik und
October 2012
www.compoundsemiconductor.net 89 Funktionelle Grenzflächen, IHFG) research group.
IHFG researchers specialise in semiconductor optics and epitaxy.
The new Aixtron system will be used to expand IHFG’s work in GaAs based optoelectronics, in particular, producing material for solid state lasers.
The order was booked in the first quarter of 2012 and the reactor will be delivered in the third quarter of 2012.
Michael Jetter of IHFG comments, “We want to use the CCS 3x2” in two ways: on the one hand we want to produce our GaAs-based laser structures on GaAs, but we also want to transfer them to silicon substrates. As a specialist in semiconductor optics, the Institute’s main research areas are semiconductor lasers and low dimensional structures such as quantum wells (QWs) and quantum dots (QDs).”
One focus of the work will be quantum cryptography and single photon emitters. However, the researchers also foresee opportunities arising from their efforts in automotive electronics. In particular, the researchers plan to grow III-V materials on silicon substrates using Aixtron’s MOCVD technology.
Jetter adds, “We would like to give silicon electronics an optic touch, which means that we want to monolithically integrate III-V optoelectronic devices (lasers and LEDs, either QW- or QD-based) into CMOS-compatible silicon substrates. These can then be used for the optical data interconnects either on-chip, chip-to-chip or as board-to-board connectors.”
The Aixtron equipment will be also used by the Stuttgart Research Centre of Photonic Engineering (SCoPE), which aims to improve interdisciplinary collaborations between scientists and engineers at the Universität Stuttgart.
IHFG and Aixtron plan to work together in the future on joint research and to co-operate on other scientific programs in the Stuttgart region, focusing on III-V growth on silicon.
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