CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY Volume 18 Number 7
contents industry & technology
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Soraa inches closer to affordable GaN crystals A novel crystal growth process could ease GaN substrate production bringing brighter, more efficient LEDs.
Green light for laser diodes? Researchers at a small, Canadian start-up have unveiled simple test structures that emit incredibly bright green light. Have they filled the green gap?
Trying times spawn long-term success Returning home in the early 1980s without a job to go to, Ian Neale had a big decision to make about his future. Hindsight shows that he got it right when he decided to launch Hiden Analytical, a highly successful metrology firm that is now celebrating its thirtieth anniversary.
Unveiling structural anomalies in LEDs The performance of LED light bulbs is impaired when delamination occurs within or between the parts that make up a packaged device.
Uncovering imperfections in SiC The miniscule scratches and pits found on the surface of SiC substrates spawn yield-killing defects in the epiwafers. It is not possible to pick-up these minor imperfections and track their consequences with conventional light- scattering inspection tools, but this can be done with detection systems employing confocal optics and differential interferometry.
Slashing the cost of GaN HEMTs Affordable GaN HEMTs are within reach when production moves to 200 mm GaN-on-silicon epiwafers processed on standard silicon lines.
Turbocharging VCSELs How can we accelerate VCSELs to the speeds needed in chip-to-chip optical interconnects? Add a little strain to the quantum wells, tune the photon lifetime and trim the cavity size and the oxide capacitance, suggest Sumitomo Electric Device Innovations.
Refined BiHEMT targets the wireless standards Makers of smartphones and tablets place great importance on the efficiency of amplifiers, because this governs battery life.
Research Review Inserting InGaN slashes LED droop Coalescence promises perfect GaN boules
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- Combining logic and light on
GaN-on-silicon chips
Mitsubishi Electric's Ku-band GaN HEMT goes into orbit
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Lumileds boosts lumens per watt by 27 percent
GaAs-on-graphene hybrid for optoelectronics
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