LEDs ♦ news digest
Meaglow says its reactor overcomes these difficulties by utilising its patent pending hollow cathode and low temperature growth process which is capable of growing the volatile compound of indium required to make green and yellow diodes.
Having a nitride device that emits strongly in the yellow is a monumental step forward for low temperature InGaN growth.
Meaglow also says the quality of InGaN produced by its technique is pioneering the industry. Results for this test device were presented to scientists in the nitride semiconductor research community at the recent ISSLED2012 conference held in Berlin, Germany.
The firm is now focused on commercialising its InGaN technology, and is looking for partners interested in creating next generation devices using the thick InGaN template layers.
Cree’s 150mm n-type SiC wafers on the market
LED innovator Cree has expanded its product family and is now offering epitaxially grown silicon carbide wafers of 150mm (almost 6 inches) diameter
Cree has announced the availability of high quality, low micropipe 150mm 4H n-type SiC epitaxial wafers.
The firm says this latest advancement lowers device cost and enables adoption for customers with existing 150mm diameter device processing lines.
used in the production of a broad range of lighting, power and communication components, including LEDs, power switching devices and RF power transistors for wireless communications. 150mm diameter single crystal SiC substrates enable cost reductions and increased throughput, while bolstering the continued growth of the SiC industry.
“Cree’s ability to deliver high volumes of 100mm epitaxial wafers is unrivalled in the SiC industry and our latest 150mm technology continues to raise the standards for SiC wafers,” says Vijay Balakrishna, Cree materials product manager. “Our vertically integrated approach assures customers of a complete solution for high quality 150mm SiC epitaxial wafers, providing industry leaders within the power electronics market the stable supply they demand.”
Cree’s 150mm epitaxial wafers with highly uniform epitaxial layers as thick as 100µm are available for immediate purchase.
Cree’s 150mm 4H n-type SiC epitaxial wafers are available for immediate purchase in limited quantities.
Students get free places at CS International.
CS International and European Photonics Industry Consortium (EPIC) have joined forces at the Compound Semiconductor industry’s premier international event, CS International, which will held in Frankfurt, Germany on 4th & 5th March 2013.
As part of CS International’s commitment to support and encourage students and ensure the next generation of professionals develop technologies that will benefit the compound semiconductor industry at large, ten students will be selected by EPIC to attend the conference at no cost.
This must attend event for 2013, the third in the series will be held in Frankfurt, Germany.
SiC wafer SiC is a high-performance semiconductor material
Professionals from around the world attending this two-day event will hear key insights and opportunities, from a range of leading analysts, and learn of the latest chip developments in LEDs, solar cells, lasers and power and RF electronics.
October 2012
www.compoundsemiconductor.net 75
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