Power Electronics ♦ news digest


developing environmentally conscious products along with their production bases. The other goals are to establish a resource recycling system and realising a borderless business environment in Asia.


Transphorm awarded for advancing GaN power technology


The innovator of gallium nitride design and process technologies has been honoured for enabling implementation of highly-efficient power conversion systems


Transphorm has been selected by the World Economic Forum as a 2013 Technology Pioneer, citing the company’s innovations in GaN technology.


The World Economic Forum selected its 2013 Technology Pioneers in the areas of information technology, telecommunications and new media, energy and environment, and life sciences and health, based on demonstrative vision and leadership in their fields, innovative ideas and approaches, and their impact on society and business.


“Transphorm is delighted and honoured to be selected as a Technology Pioneer by the World Economic Forum,” says Transphorm CEO Umesh Mishra. “By redefining power conversion using our proprietary gallium nitride-based products, Transphorm is solving the immediate and urgent problem of unnecessary waste in power conversion, saving valuable resources and enabling new energy efficient systems today.”


Transphorm says its efficient, compact, and easy- to-use solutions can cut total world electrical energy waste by as much as 10 percent and simplify the design and manufacturing of a wide variety of electrical systems and devices, including motor drives, power supplies and inverters for solar panels and electric vehicles.


Transphorm unveils first JEDEC qualified 600V GaN HEMT


The 600V gallium nitride-on-silicon carbide device employs the firm’s EZ-GaN technology


Transphorm has gained JEDEC qualification of its TPH2006PS, GaN HEMT (High Electron Mobility Transistor) grown on a SiC substrate.


The firm says this is the industry’s first qualified 600V HEMT device.


The TPH2006PS, based on its patented, EZ-GaN technology, combines low switching and conduction losses resulting in reduced energy loss of up to 50 percent compared to conventional silicon-based power conversion designs, today. The TO-220- packaged device features RDS(on) of 150 mΩ, Qrr of 42 nC and high frequency switching capability that enables compact, lower cost systems.


“Our team has accomplished the first qualification of a 600 V GaN Transistor product, allowing our customer-partners to now introduce energy saving products, Powered-by-Transphorm”, says Primit Parikh, President of Transphorm. “This development also lays to rest any doubts that high voltage GaN transistors can indeed be successfully qualified”.


Transphorm’s efficient, compact, and easy-to-use solutions simplify the design and manufacturing of a wide variety of electrical systems and devices, including motor drives, power supplies and inverters for solar panels and electric vehicles.


For customers looking for a low-risk roadmap to the next generation of power conversion technology, Transphorm says its proprietary EZ-GaN provides a cost-effective, customisable and easy-to-use solution ready for commercial scale.


October 2012 www.compoundsemiconductor.net 109


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