This page contains a Flash digital edition of a book.
news digest ♦ Power Electronics


these multilayered structures, respectively. The technology detailed in the patents is ideally suited for mounting large semiconductor chips such as high-power transistors and laser diodes where CTE matching is required.


The proliferation of diamond use in technology has seen a dramatic increase in recent years. Formed in 1993, sp3 Diamond Technologies has been a driving force in that commercialisation.


“We experienced our best year ever in 2011 due in large part to two markets,” continues Aidala. “We saw our diamond heat spreaders adopted in multiple applications, most notably in wireless base stations where the thermal properties of diamond are paying huge dividends. In CMP pad conditioning we sold five times more CVD diamond deposition tools than the previous year. “


“Diamond is being adopted. While our CVD diamond equipment and our heat spreaders remain our primary focus, we see tremendous opportunity for diamond applications in the future. The potential for diamond layers in the SOI-based process alone creates fantastic growth opportunities,” adds Aidala.


Semiconductor devices require packaging with high thermal conductivity to prevent overheating and to maintain useful operation of the device. Existing materials generally deliver good thermal characteristics but poor CTE matching, or are well- matched to most semiconductor materials, but do not offer high enough thermal conductivity for today’s devices.


sp3 Daiamond says its DiaMatch technology bridges this gap by offering variable CTE-matching, copper-level thermal conductivity and a choice of conductive or insulating die attach surfaces. What’s more, it delivers precise edges and no compositional variability from point to point in the material.


The new patents detail a multilayered structure of thin diamond layers and high thermal conductivity metal layers and the methods of making the structure. The multilayered structure has a variable CTE, which depends on the various layer thicknesses and can be different on each side. This allows the structure to safely bond to compound semiconductor materials such as SiC, GaAs, and GaN while providing the thermal management


116 www.compoundsemiconductor.net October 2012 benefits of diamond.


LED demand triggers AkzoNobel’s multimillion dollar expansion


The firm is expanding its Tri-Methyl-Aluminium and Tri-Methyl-Gallium production facilities in Texas


AkzoNobel is to boost capacity at one of its US sites in order to meet increasing demand from the semiconductor industry, particularly for the production of LEDs. Financial details were not disclosed.


The investment, at the company’s Battleground facility in Texas, involves extending the Tri-Methyl- Aluminium (TMAL) unit and building a new Tri- Methyl-Gallium (TMG) plant, consolidating the plant’s status as the largest of its kind in the world. TMAL is a feedstock for TMG, a high purity metal organic (HPMO) used in products such as LED wafer manufacturing.


“The LED industry has been experiencing strong growth, well in excess of 20 percent per annum,” explains Werner Fuhrmann, AkzoNobel’s Executive Committee Member responsible for Specialty Chemicals. “This investment will make production more cost-efficient and ensure that we continue supplying our customers with a highly specialised product which is playing an increasingly important role in 21st century technology.”


The global LED industry is projected to grow significantly over the next decade, driven by applications in displays such as PCs, laptops and tablet screens. The massive increase in the use of LEDs for general lighting is also expected to contribute strongly as they become the preferred source of light over incandescent bulbs and compact fluorescent lamps, due to their low energy consumption and extended lifetime.


The expanded TMAL unit is expected to be completed in the third quarter of 2013, while the new TMG plant will be ready in August 2014.


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131