Power Electronics ♦ news digest
Cree’s 150mm n-type SiC wafers on the market
LED innovator Cree has expanded its product family and is now offering epitaxially grown silicon carbide wafers of 150mm (almost 6 inches) diameter
Cree has announced the availability of high quality, low micropipe 150mm 4H n-type SiC epitaxial wafers.
The firm says this latest advancement lowers device cost and enables adoption for customers with existing 150mm diameter device processing lines.
are available for immediate purchase in limited quantities.
Equipment and Materials
SP3 Diamond granted new patents for laser applications
The patents awarded to the supplier of diamond products and deposition equipment services, relate to thermal management in packaging. The technology is ideally suited for mounting large semiconductor chips such as high-power transistors and laser diodes where CTE matching is required
SiC wafer
SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including LEDs, power switching devices and RF power transistors for wireless communications. 150mm diameter single crystal SiC substrates enable cost reductions and increased throughput, while bolstering the continued growth of the SiC industry.
“Cree’s ability to deliver high volumes of 100mm epitaxial wafers is unrivalled in the SiC industry and our latest 150mm technology continues to raise the standards for SiC wafers,” says Vijay Balakrishna, Cree materials product manager. “Our vertically integrated approach assures customers of a complete solution for high quality 150mm SiC epitaxial wafers, providing industry leaders within the power electronics market the stable supply they demand.”
Cree’s 150mm epitaxial wafers with highly uniform epitaxial layers as thick as 100µm are available for immediate purchase.
Cree’s 150mm 4H n-type SiC epitaxial wafers
sp3 Diamond Technologies, has been awarded two patents by the United States Patent and Trademark Office for its DiaMatch coefficient of thermal expansion (CTE) matched heat spreader technology.
The diamond-based multilayered structure outlined in the patents solves several technical challenges to deliver the high heat spreading and CTE matching required for reliable semiconductor and laser packaging.
“In 2007, we received Phase II SBIR funding from the Missile Defence Agency to develop a thermal management solution that enables the next generation of high power lasers and semiconductors. We had established solid IP in this area and began providing solutions with great potential that target current and future high- power semiconductor and laser applications,” says Dwain Aidala, president and COO of sp3 Diamond Technologies.
“We are currently in the process of identifying the right thermal management or specialised material partners to further develop this technology into a fully productised offering.”
U.S. Patent Nos. 8,105,693 and 8,147,927 cover a multilayered structure including at least one diamond layer and methods of making
October 2012
www.compoundsemiconductor.net 115
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131