LEDs ♦ news digest Association (SVIPLA).
Each year the SVIPLA recognises an individual who has made an exceptional contribution in the technical arts and this year has chosen to honour Nakamura for his technological innovations, including the development of Soraa’s GaN on GaN technology.
Soraa says GaN on GaN allows a much smaller, brighter LED brighter diode and makes it possible to use one LED light emitter per lamp-manufacturers using other substrates must use three, four and even more diodes to achieve equivalent brightness.
Multiple sources of light within a lamp mean fuzzy shadows and not the crisp light required of an MR- 16 for best use in commercial, museum or high-end consumer applications. MR-16 lamps, or bulbs, are Soraa’s first commercially available products.
Shuji Nakamura, Co-founder of Soraa
“Shuji’s pioneering work has enabled Soraa to produce the most advanced LED lamps on the market,” says Eric Kim, CEO of Soraa. “As we continue to innovate, we are pleased to see our co-founder honoured for the work that started it all. For those who have followed his contributions to the industry and to LED technology, this award has special meaning.”
Nakamura, known by some in the lighting industry as the “inventor of high-brightness blue and white LEDs,” has filed more than 700 patent applications, and can claim at least 360 authorised invention patents.
His development of nitride-based semiconductors, which eventually led to Soraa’s “simply perfect” LED lamps is cited by the SVIPLA as “one of the most important achievements in the materials science of semiconductors in the last 30 years.”
“I am proud to be recognised by the property law association and I thank them for this. My focus is to create efficient lighting products that do not compromise on performance, offer the highest quality available and greatly reduce energy waste,” says Nakamura.
Using the GaN on GaN technology developed by Nakamura, Soraa produces LEDs that perform much better than LEDs from other manufacturers that typically deposit GaN on non-native substrates like silicon or sapphire.
LED demand triggers AkzoNobel’s multimillion dollar expansion
The firm is expanding its Tri-Methyl-Aluminium and Tri-Methyl-Gallium production facilities in Texas
AkzoNobel is to boost capacity at one of its US sites in order to meet increasing demand from the semiconductor industry, particularly for the production of LEDs. Financial details were not disclosed.
The investment, at the company’s Battleground facility in Texas, involves extending the Tri-Methyl- Aluminium (TMAL) unit and building a new Tri- Methyl-Gallium (TMG) plant, consolidating the plant’s status as the largest of its kind in the world. TMAL is a feedstock for TMG, a high purity metal organic (HPMO) used in products such as LED wafer manufacturing.
“The LED industry has been experiencing strong growth, well in excess of 20 percent per annum,” explains Werner Fuhrmann, AkzoNobel’s Executive Committee Member responsible for Specialty Chemicals. “This investment will make production more cost-efficient and ensure that we continue supplying our customers with a highly specialised product which is playing an increasingly important role in 21st century technology.”
The global LED industry is projected to grow significantly over the next decade, driven by applications in displays such as PCs, laptops and tablet screens. The massive increase in the use of LEDs for general lighting is also expected to contribute strongly as they become the preferred
October 2012
www.compoundsemiconductor.net 59
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131