Power Electronics ♦ news digest system applications.
These devices are used for energy efficient power electronic devices for numerous applications, such as air-conditioning, solar and wind turbine inverters, hybrid and electric vehicles, high speed trains, smart grids and high-voltage DC power transmission. SiC-based semiconductor devices can reduce energy losses and system size, leading to overall reduced system costs and enhanced reliability.
Tianyu was founded on January 7th, 2009, and is located in China’s Songshan Lake National High- tech Industrial Development Zone of Dongguan City in Guangdong province.
their entire operating range allows a square SOA limited only by average device temperature.
SOA is an indicator of the device’s ability to transfer heat away from a resistive junction. The more efficient a device is at getting rid of generated heat, the lower thermal resistance and the better the SOA performance.
EPC says its eGaN FETs have many major advantages over the power MOSFET needed for today’s high performance applications. The firm’s eGaN FET’s are claimed to offer superior device on- resistance while its positive temperature coefficients inhibit hot spot generation within the die, resulting in superior Safe Operating Area capabilities.
An application note presenting the Safe Operating Area for EPC eGaN FETs is available at: http://
epc-co.com/epc/documents/product-training/ SafeOperatingArea.pdf In addition, EPC is in the process of updating each of its product data sheets to include SOA performance curves.
Tianyu facility in Dongguan City
The firm has six major researchers and 30 engineers working on the SiC epitaxial technology growth. The epitaxial wafers are 4”, 3”, and 2”. Production capacity is 10000 pieces per month, which can be increased if needed, and product specifications reach the advanced level in international standards.
EPC to update Safe Operating Area data on eGaN FETs
The firm says its enhancement mode gallium nitride FETs exhibit a positive temperature coefficient across their entire operating range, thus overcoming one of the performance limitations of the silicon MOSFET
Efficient Power Conversion Corporation (EPC) is releasing safe operating area (SOA) data for its entire product line of eGaN FETs.
The positive temperature coefficient across virtually
EPC’s enhancement mode GaN based power management FETs are power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers.
First GaN vertical diode with 3000V breakdown
Using a new technique known as void-assisted separation, Hitachi Cable has developed gallium nitride power devices with low dislocation densities and a very high breakdown voltage
Hitachi Cable says it has succeeded in the trial manufacture of the world’s first GaN vertical diode with a reverse breakdown voltage of 3,000V or higher and a low on-resistance of about 1mΩcm2 in the forward direction.
The firm achieved this development through joint research with Toru Nakamura Laboratory in the Research Centre for Micro-Nano Technology of Hosei University and the Hitachi Central Research Laboratory.
October 2012
www.compoundsemiconductor.net 111
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131