news review Nantong Tongfang chooses Veeco
NANTONG TONGFANG SEMICONDUCTOR has received a Veeco’s TurboDisc K465i MOCVD System for research of GaN-on-silicon high brightness LEDs.
The system was delivered to Tongfang’s new LED Technology Centre in Nantong,
China.Liu Gang, General Manager of Nantong Tongfang Semiconductor,
says, “We successfully utilise Veeco’s MOCVD systems in our current production of GaN-on-sapphire based LEDs. It was the logical choice to select Veeco for our new research into GaN-on-silicon based LED devices. This is going to be a significant focus of our future R&D investment over the next few years.”
Jeff Hawthorne, Veeco’s Senior Vice President, MOCVD, adds, “Many of our LED customers are developing GaN-on- silicon technology, which offers the potential to accelerate the adoption of solid-state lighting by reducing the cost of making LEDs without compromising end- product quality. We are glad to support Tongfang in their research efforts.” The K465i features high film quality and low defects, which are key for GaN-on- silicon processing. The reactor also incorporates Veeco’s Uniform FlowFlange technology for superior uniformity and excellent run-to-run repeatability. Low maintenance TurboDisc technology enables highest system availability, excellent particle performance and high throughput. Veeco says the K465i provides ease-of-tuning for fast process optimisation on wafer sizes up to 8 inches and fast tool recovery time after maintenance. Nantong Tongfang Semiconductor Co., Ltd., a subsidiary of the publicly traded Tsingua Tongfang Co., Ltd., produces and develops LED modules and LED lighting products.
Microsemi: 700W GaN-On-SiC
Transistor MICROSEMI CORPORATION has unveiled the 1011GN-700ELM, the first in a family of radio frequency (RF) transistors for high- power air traffic control (ATC), secondary surveillance radio (SSR) applications. SSR is used to send a message to an aircraft equipped with a radar transponder and collect information that allows air traffic controllers to identify, track and measure the location of that particular airplane.
Microsemi's new 700 watt (W) peak 1011GN-700ELM operates at 1030 megahertz (MHz) and supports short and long-pulsed extended length message (ELM). The new transistor is based on GaN on SiC, which is ideal for high-power electronics
applications.Microsemi's upcoming product line includes multiple high-pulsed power GaN on SiC transistors for both L, S and C-band radar systems.
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www.compoundsemiconductor.net October 2012
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