Power Electronics ♦ news digest
as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 driver IC eliminates these challenges, enabling power designers to realise the benefits of GaN FETs in a variety of popular power topologies.
Meeting the stringent gate drive requirements of enhancement-mode GaN FETs requires multiple discrete devices and significant circuit and PCB design effort. National’s LM5113 fully-integrated enhancement-mode GaN FET driver greatly reduces circuit and PCB design effort and delivers industry-best power density and efficiency.
“National’s LM5113 bridge driver helps designers unleash the performance of eGaN FETs by simplifying the design,” said Alex Lidow, co- founder and CEO for Efficient Power Conversion Corporation. “The LM5113 dramatically reduces component count, and paired with our eGaN FETs, enables a tremendous PCB area savings and higher level of power density versus equivalent MOSFET-based designs.”
National’s LM5113 is a 100V bridge driver for enhancement-mode GaN FETs. Using proprietary technology, the device regulates the high side floating bootstrap capacitor voltage at approximately 5.25V to optimally drive enhancement-mode GaN power FETs without exceeding the maximum gate- source voltage rating. The LM5113 also features independent sink and source outputs for flexibility of the turn-on strength with respect to the turn-off strength.
A low impedance pull down path of 0.5 Ω provides a fast, reliable turn-off mechanism for the low threshold voltage enhancement-mode GaN power FETs, helping maximize efficiency in high frequency power supply designs. The LM5113 features an integrated high-side bootstrap diode, further minimizing PCB real estate. The LM5113 also provides independent logic inputs for the high-side and low-side drivers, enabling flexibility for use in a variety of both isolated and non-isolated power supply topologies.
National’s LM5113 is offered in a 10-pin 4 mm by 4 mm LLP package and cost $1.65 each in quantities of 1,000. Samples are available now and production quantities will be available in September.
Imec scientists impress at E-MRS and VLSI
Researchers based at the Belgian research institute have been acknowledged for their contributions to semiconductor technology.
At the European Materials Research Society (E-MRS) 2011 Spring Meeting, Liyang Zhang has received the Young Scientist Award for her paper ‘Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures’, contributed to the Symposium on group III nitrides and their heterostructures for electronics and photonics.
In this work, the authors present the results of a study on the impact of polarisation on multiple quantum wells (MQWs) revealed by the optical performance by photoluminescence measurements. In addition to the traditional InGaN/GaN MQWs, they also demonstrate InxGa1-xN/InyGa1-yN MQWs. The MQWs were grown on sapphire substrates by MOVPE. Co-authors of the paper are K. Cheng, H. Liang, R. Lieten, M. Leys and G. Borghs.
The paper ‘1mA/µm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D’ by Jerome Mitard et al from K.U.Leuven,has been selected as one of the technical highlights of the 2011 Symposium on VLSI Technology and Circuits. The paper reports the successful integration of a strained SiGe45% implant free quantum well pFET with embedded SiGe25%-source/drain. The results suggest that the SiGe-IFQW with embedded S/D is a viable device option for the 16nm technological node and beyond. The work was co-authored by researchers based at and imec and K.U. Leuven.
RFMD portfolio now features Ember ZigBee technology
The RF6555 FEM developed with Ember is targeting smart energy applications.
RF Micro Devices, a global designer and manufacturer of high-performance RF components and compound semiconductor technologies, has unveiled the highly integrated RF6555 ZigBee front
July 2011
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