news digest ♦ LEDs
Samsung LED is requesting an injunction from unauthorised use of its intellectual property and is seeking money damages. The defendants include Osram Korea and two companies that sell Osram’s products in Korea, Barun Electronics and Dabo Industrial System.
The 8 patents-in-suit relate to LED chip and package technology used in LED light lenses and high power applications which are widely used in LED headlights and LED lightings.
The Korean suit is Samsung LED’s first response to Osram’s initiation of lawsuits against Samsung LED in the US (District Court of Delaware and the U.S. International Trade Commission) and Germany. Samsung LED is developing a measured response.
Samsung LED has a considerable number of core LED patents and patent applications. The firm currently has about 700 US patents and patent applications and about 2000 Korean patents and patent applications.
“We are developing evidence to show that Samsung LED is not infringing any valid claim of Osram’s patents, as well as evidence of Osram’s unauthorised use of our patents, we are evaluating every contingency and will vigorously defend our technology,” said Jun Sung Park, Vice President and the head of the IP and Legal Affairs Team at Samsung LED.
Kyma updates progress on AlGaN and AlN development
The firm which uses a patented III-N PVDNC process, is also seeking partnerships with bulk aluminium nitride materials developers who are interested in improving the optical properties of their materials.
Kyma Technologies, a supplier of crystalline nitride semiconductor materials, has provided an update on its progress in crystalline AlGaN and AlN materials development and to state its desire to collaborate with bulk AlN developers interested in improving the optical transparency of their materials.
Kyma has over a decade of experience in the 58
www.compoundsemiconductor.net July 2011
fabrication of AlN templates which are thin films of crystalline AlN deposited on sapphire, silicon, or SiC substrates. The process uses Kyma’s patented and proprietary III-N Plasma Vapour Deposition of NanoColumns (PVDNC) technology.
These products are gaining acceptance with customers engaged in blue and green LED manufacturing. The nanocolumnar nature of Kyma’s PVDNC AlN templates present an excellent surface for nucleating GaN buffer layers which then can be followed by a high quality GaN LED device structure.
Recently Kyma began extending its process capabilities to develop materials which are designed to support high Al content device layer structures. Such structures are of interest for UV and high temperature and high power electronics applications.
Keith Evans, Kyma’s president & CEO, stated: “While our PVDNC AlN templates are excellent substrates for manufacturing GaN-rich devices such as blue and green LEDs and AlGaN/GaN field effect transistors (FETs), we are also employing other processes to develop materials that are specifically tailored to support the manufacturing of AlN-rich devices such as mid UV LEDs for germicidal irradiation and AlN/AlGaN FETs for temperature insensitive high power electronics applications.”
Towards these goals, Kyma is exploring and has made significant progress in the growth of crystalline AlN and AlGaN materials using high growth rate hydride vapour phase epitaxy (HVPE).
By adding a novel Al source to their HVPE tools, Kyma is now able to grow crystalline AlN and a broad range of AlGaN compositions. And just like GaN HVPE, the structural quality of the HVPE grown AlN and AlGaN crystals are influenced by the seed crystal that they are grown upon.
Kyma has already demonstrated the ability to deposit crystalline AlN by HVPE on a range of starting seed materials, including on AlN structures which were produced by other techniques.
Ed Preble, Kyma’s CTO & VP business development, stated, “Our AlN HVPE process appears to have many of the traits of our GaN HVPE process. We are able to rapidly replicate the
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