review news
NXP brings GaN-on-SiC technology to the masses
AT IMS2011, NXP Semiconductors showcased a live demo of its next- generation products based on GaN-on- SiC technology. The GaN demo includes a 50-W wideband amplifier, the CLF1G0530-50, covering 500 to 3000 MHz; 2.1-GHz and 2.7-GHz Doherty power amplifiers for base stations; and a 100-W amplifier, the CLF1G2535-100, covering 2.5 - 3.5 GHz.
NXP has developed its high-frequency, high-power GaN process technology in collaboration with United Monolithic Semiconductors and the Fraunhofer Institute for Applied Solid State Physics. NXP’s GaN devices are manufactured on SiC substrates for enhanced RF and thermal performance. Target end-user applications include cellular communications, wideband amplifiers, ISM, PMR, radar, avionics, RF lighting, medical, CATV and digital transmitters for cellular and broadcast.
With its high power densities, GaN has the potential to expand into applications such as high power broadcast
applications, where solid-state power amplifiers (PAs) built with vacuum tubes are still the norm.
While most base station PAs today are limited to specific applications, this new GaN process technology supports a roadmap towards a “universal transmitter” that can be applied in multiple systems and frequencies, simplifying transmitter production and logistics, and allowing operators to switch between frequency bands to instantly meet demands in a base station’s coverage area.
“As GaN continues to gain traction, the entry of semiconductor companies such as NXP helps to validate GaN as a ‘technology of choice’ for RF power semiconductors, and will help to accelerate broader adoption,” said ABI Research director Lance Wilson.
“We were overwhelmed by the extraordinarily positive response to our GaN roadmap presentation at CS Europe earlier this year, from customers
Fujitsu develops world’s first GaN HEMT T/R C-Ku band module
FUJITSU LABORATORIES has successfully developed what it claims is the world’s first transmitter/receiver (T/R) module using GaN HEMT technology that features an output of 10 W and operates in a wide bandwidth range of C-band, X-band, and Ku-band (C-Ku band) radio frequencies over 6-18 GHz.
By combining the world’s best performing GaN power amplifier (PA) developed last year with the newly developed GaN low-noise amplifier (LNA), the researchers achieved a compact T/R module that generates a high-output.
This technology makes possible the integration of multiple types of communications equipment—each currently operated at a different frequency range—into a single module,
making for the development of smaller, lighter radar equipment and wireless communication systems.
GaN is used as a blue-LED in traffic signal lights, and compared to the conventional semiconductor materials of silicon and GaAs, it features a high saturation carrier velocity and relative resistance to the breakdown caused by voltage.
Given these characteristics, GaN HEMTs show promise for high-output and exceptionally efficient operations.
In line with the advance of a network- based society, radio wave demand in a variety of wireless systems is expected to increase even further. For example, aircraft radar typically switches between the C-band, which can detect distant
and partners, as well as other semiconductor companies – in large part due to the economies of scale we’re able to bring to the equation.
As we release new products based on GaN, we’ll also be working with our partners to build a European supply chain that optimizes costs at every step in the value chain, and continue to offer our customers choice when it comes to selecting the best alternatives – LDMOS or GaN – for high-efficiency applications,” commented John Croteau, senior vice president and general manager, high performance RF, NXP Semiconductors.
objects and works well in rain, and the X- and Ku-bands which are able to measure physical objects with high- precision.
Currently, this demand for multiple frequency ranges requires different communications equipment each suited to their respective frequency band.
However, a single T/R module capable of covering the entire C-Ku band range would meet a variety of needs, allowing systems to become more compact.
July 2011
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