review news
Toshiba introduces GaN HEMT PA for extended Ku-Band
AT the 2011 IEEE MTT-S International Microwave Symposium, Toshiba America Electronic Components (TAEC) and its parent company, Toshiba Corporation revealed the TGI1314-25L, GaN HEMT. This is the latest addition to its power amplifier (PA) product family.
The TGI1314-25L, Toshiba’s new GaN HEMT for Ku-band satellite
communication application, operates in the 13.75GHz to 14.5GHz range with output power of 25W.
The device features output power of 44.0dBm (typ.) with 39dBm input power, linear gain of 8.0dB (typ.) and drain current of 2.5 Amps (typ.) and an efficiency of 29 %. The product comes in a 77-AA07A package and is targeted to Satcom applications including very small aperture terminals (VSAT).
“The expansion of Toshiba’s GaN power amplifier family brings higher gain and very efficient features to microwave
designers, which reduce heat sink requirements and enable smaller terminals and converters with a full GaN HEMT line-up that includes drivers,” said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, TAEC Discrete Business Unit.
“Since Toshiba released its 50W Ku- band product a few years ago, many customers have requested a full line-up of GaN HEMTs, which will simplify the power supply design of Solid-State Power Amplifiers (SSPA) and block up converters (BUC). In addition, small output power applications, such as VSAT, can benefit from GaN HEMTs, making fan-less or very small equipment possible,” he concluded.
In 2009, Toshiba announced the addition of the Extended Ku-band TGI1314-50L to its GaN power amplifier family, which operates in the 13.75GHz to 14.5GHz range for Satcom to support SSPA applications.
Microsemi expands S-Band RF portfolio with GaN-on-SiC devices
MICROSEMI CORPORATION, has expanded its family of S-band RF power transistors to include devices that use advanced GaN-on-SiC process technology.
The latest high-pulsed power transistors deliver industry-leading peak power and power gain for radar systems operating in the 2.7 GHz to 3.5 GHz frequency band.
“This is a significant step in Microsemi’s ongoing strategy to extend its product development and marketing initiatives to support the increasingly challenging requirements of next-generation air traffic control and other radar systems,” said Charlie Leader, Microsemi vice president and general manager.
“By expanding our power transistor offering beyond traditional silicon material to use the latest compound semiconductor technologies, we take performance to the next level, create new markets for our products, and demonstrate our continuing commitment to customers in the radar systems development business.”
Microsemi has leveraged its industry- leading expertise in S-band RF power transistors to create a family of GaN-on- SiC solutions that are tailored to support the requirements of next-generation systems requiring higher power, better efficiency, and wider bandwidth than is possible using conventional silicon or SiC process technologies.
Taiyuan University selects Aixtron for GaN blue LED
AIXTRON SE has a new order for an MOCVD reactor from new customer Taiyuan University of Technology, China. The order is for one Aixtron Close Coupled Showerhead (CCS) 3x2-inch configuration deposition system which will be used for research into GaN-based materials for high-brightness (HB) blue LEDs. The system will be delivered in the second quarter of 2011. One of Aixtron´s local support teams in China will commission the new reactor in a new state of the art facility at the University.
Jian Liang, Professor of Taiyuan University of Technology’s Material College State Laboratory, comments, “This will be our first Aixtron epitaxial growth system though we are already very familiar with this technology and know well of the reputation of this company’s equipment and service. The Close Coupled Showerhead system is an ideal choice for us because it satisfies so many criteria. We are particularly interested in its versatility as well as stand-out factors such as low material consumption. These will ensure that this system is so much superior for our University research project.”
Celebrating its 100th anniversary in 2002, Taiyuan University of Technology comes under the authority of the provincial government of Shanxi, China. Historically, although it was originally part of Shanxi University it did not become an independent university until much later. Today it is listed officially as one of the ‘Top 100 Universities in China’ according to the Chinese government.
For applications operating in frequency bands up to 20GHz, the wide bandgap material properties of GaN-on-SiC technology enable smaller systems with improved voltage, gain, broadband performance, drain efficiency, and long- term reliability.
July 2011
www.compoundsemiconductor.net 13
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