news digest ♦ RF Electronics
The MAAL-010704 is a versatile broadband LNA which operates in the frequency range 0.1 to 3.5GHz and is packaged in SOT-363. Its bias current can also be set externally via the use of a resistor. The LNAs all feature an integrated active bias circuit allowing direct connection to 3V voltage supply while minimising variation over temperature and process.
Production quantities and samples of MAAL-010705 and MAAL-010706 are available from stock. The MAAL-010704 will be available for sampling and production in summer 2011.
TriQuint Introduces 10 – 12 GHz, 2W PA
The power amplifier is best suited for Point to Point radio and X-band communications.
TriQuint Semiconductor has revealed the TGA2535- SM, a high-linearity power amplifier designed to operate from 10 - 12 GHz.
Delivering 43dBm OIP3, the TGA2535-SM offers 25dB small signal gain, P1dB of 33dBm, and saturated power of 34.5dBm at a quiescent bias condition of 6V and 1300mA.
The SST12LP17E is one of the smallest fully matched power amp in its class, requiring only one DC bypass capacitor to achieve optimum performance. The SST12LP18E is a lower-cost, lower-voltage alternative to Microchip’s popular SST12LP14E power amp. It offers the lowest operating voltage of any Microchip RF power amp, while operating at -20 to +85 degrees Celsius.
The input and output of the amplifier are matched to 50 Ω with a typical return loss of 15 dB. Packaged in a 5x5mm QFN, this amplifier is best suited for 10 and 11 GHz Point to Point radio and X-band communications and is pin compatible with the TGA2533-SM (12.7 - 15.4 GHz) amplifier.
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www.compoundsemiconductor.net July 2011
The devices feature operating voltages as low as 2.7V, linear output power as high as 18.5 dBm at 2.5 % EVM using IEEE 802.11g OFDM 54 Mbps, and 23.5 dBm for IEEE 802.11b and a high power- added efficiency of up to 38 % for IEEE 802.11b.
The amps are offered in an 8-pin 2mm x 2mm x .45mm QFN package. They are ideal for embedded WLAN applications where small size, high efficiency and low-battery voltage operation are required, such as in the consumer electronics market, in cell
Evaluation boards are available upon request.
Microchip expands RF power amplifier portfolio
The new high-efficiency PA modules based on gallium indium phosphide / gallium arsenide HBT technology are ideal for embedded WLAN applications requiring small size, high efficiency and low battery-voltage operation.
Mirochip Technology, a provider of microcontroller, analogue and Flash-IP solutions, has expanded itsRF power amplifier portfolio, with the addition of the InGaP/GaAs based SST12LP17E and SST12LP18E devices.
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