RF Electronics ♦ news digest
Integra unveils GaN-On-SiC devices for L-band avionics
The PN IGN0912L500 operates over the instantaneous bandwidth covering 960 GHz to 1215 GHz while the PN IGN1214L500 operates over 1.2 GHz to 1.4 GHz.
Integra Technologies, Inc. (ITI), a manufacturer of high power pulsed RF transistors, has developed two GaN on SiC technology devices targeted for the L-band market. The firm’s RF design team have launched two new products characterised in the L-band; the IGN0912L500 and the IGN1214L500.
power while providing 13dB of gain and 60% efficiency. The single ended device is housed in a ceramic flanged package providing excellent thermal advantages.
The IGN0912L500 and IGN1214L500 are available for sampling in Q3 2011.
Integra introduces GaN-on-SiC broadband devices
The firm’s gallium nitride on silicon carbide RF devices are targeting broadband applications ranging from 30-512MHz to 100-1000MHz.
Integra Technologies, Inc. (ITI), a manufacturer of high power pulsed RF transistors, has developed two GaN on SiC technology devices targeted for the military communication market.
Integra has launched several new products characterised for broadband applications ranging from 30-512MHz to 100-1000MHz.
“Integra further solidifies its leadership position in high power pulsed RF transistors in the L-band radar market with these two new products.” says Jeff Burger, VP of Engineering and original founding member. “We continue to provide superior technology and excellent support to customers in our target market.”
Intended for commercial avionics applications including IFF, TACAN and DME applications, the PN IGN0912L500 operates over the instantaneous bandwidth covering 960 GHz to 1215 GHz in the L-band frequency range. Characterised with a pulse train of 444 x (7us ON, 6us OFF) with 22.7 % LTDC the IGN0912L500 typically supplies a minimum of 500 watts of peak output power. The single ended device provides over 12dB of gain and 62% efficiency. The device is housed in a ceramic flanged package providing excellent thermal advantages over plastic packaged devices.
The PN IGN1214L500 operates over the instantaneous bandwidth covering 1.2 GHz to 1.4 GHz in the L-band frequency range. Intended for L-band radar applications that device is characterized under 1ms and 10% duty cycle conditions and supplies more than 500W of output
“Integra is excited by this new technology that allows us to penetrate new markets involving CW applications such as Electronic Warfare (EW) for the defence industry.” says Brian D. Battaglia, Director of Sales and Marketing at Integra, describing the development effort. “GaN technology inherently is broadbandable with the inherent low parasitic capacitance. The GaN technology development effort is a direct result of customer requests for smaller, more efficient power devices with broadband performance.”
About the IGN12UM21A1, IGN25UM21A1 and IGN50UM21A1
Intended for commercial broadband communication July 2011
www.compoundsemiconductor.net 71
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