CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY Volume 17 Number 5


contents industry & technology


18 25 28 33 37 38


39 40 42


news 07 09 10


A critical edge Richard Stevenson interviews Solar Junction and discovers that its record breaking efficincies stem from dilute nitrides


Lighting up the world euroLED 2011 highlighted the progress of LEDs for general illumination and discussed mass market adoption challenges


Wafer bonding selection LEDs with a vertical geometry show promise for solid state lighting but success can be dependent on the right tool process


High yield desires Improving yield output is vital to lowering production costs and a comprehensive inspection regime may be the key


Droop solution The droop probelm is well known to LED manufacturers so news that quaternary barriers cut droop is welcome


Thin film LEDS


Photochemical etching with potassium hydroxide creates LEDs with less strain


Boosting HFET performance Freestanding substrate provides needed boost to GaN HFET performance


Intra cavity frequencies QCLs with internal frequencies are doubling target gas sensing


Defect free GaAs nanowires A silicon base can improve GaAs nanowires


25


Mercury satellite helped by GaAs Aixtron celebrate 2 000th system


Joint venture to advance LED First Solar reach 4GW


GaN bar raised for industry RFMD qualifies 65V process


12 13 15


US DOE provide LED impetus Smallest GaN broadband 5W PA


GaN HEMT PA S-Band RF portfolio


GaN on SiC for the masses First GaN HEMT T/R C-Ku


12 15 July 2011 www.compoundsemiconductor.net 5 37


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