news review
Veeco awarded $4 million to boost LED manufacturing
THE US DOE has awarded a total of $14.8 million to accelerate technologies that reduce costs and enhance product quality in SSL lighting. Other recipients include Cree, Lumileds, Soraa, Moser Baer and three US universities.
US Energy Secretary Steven Chu has awarded nearly $15 million to support eight new R&D projects that will accelerate the development and deployment of SSL technologies like LEDs and OLEDs. Both have the potential to be more energy efficient than conventional incandescent lighting and can last up to 25 times as long.
The projects selected are located in four states and are focused on advancing core R&D goals, developing new products, and expanding domestic manufacturing capacity to help the U.S. remain competitive in this growing technology market.
“These investments in cutting-edge lighting technologies will support American innovation, create new
manufacturing jobs for U.S. workers, and help ensure that the United States leads the world in this rapidly evolving industry,” said Secretary Chu.
The projects selected address the full spectrum of research, development, and deployment for SSL technologies and will leverage an additional $4 million in private sector funding. In order to achieve significant cost reductions and
enhanced quality by improving manufacturing equipment, processes, or monitoring techniques, Veeco Instruments has been awarded $4 million. Moser Baer Technologies has been given nearly $3 million. To enhance product development, Cree has been awarded $1.6 million and Philips Lumileds almost $2 million.
Research recipients are Arizona State University, Research Triangle Institute, Soraa and the University of Rochester who have been awarded a total of $4.3 million. These projects will focus on filling key technology gaps in LED and OLED development, improving scientific knowledge, and providing performance data for these technologies.
This is the seventh round of DOE funding for SSL technology R&D, and the second time that DOE has funded SSL projects. These efforts are part of DOE’s initiative to accelerate the adoption of SSL technology through improvements that reduce costs and enhance product performance.
Nitronex announces smallest gallium nitride
broadband 5W PA NITRONEX, a designer and manufacturer of GaN based RF solutions for high performance applications in the defence, communications, cable TV, and industrial & scientific markets, says it has developed the industry’s smallest broadband 5W PA solution.
The NPA1003 is a GaN PA MMIC and features a 4mm x 4mm thermally- enhanced QFN package with RF input and output matched to 50 ø. The highly integrated NPA1003 GaN MMIC only requires an external resistor and inductor to provide bias. With output power over 5W from 20 to 1500MHz and typical efficiency of over 50%, the overall solution size is less than 0.25 square inches.
“The new NPA1003 has created a pull in 12
www.compoundsemiconductor.net July 2011
the market that we fully anticipated it would,” commented Gary Blackington, VP of Sales & Marketing at Nitronex. “This new device has filled a market void with the right power, gain, frequency response, compact size, and ease of use all at the right price point. We have already achieved several design-ins at top tier accounts.”
“Nitronex’s MMIC process was established under a joint development agreement with a large military contractor, resulting in a fully-qualified, production-ready process in July 2009. We have worked with multiple strategically selected customers since 2009 to develop and productize custom MMICs and have shipped more than 50,000 production devices to customers,” said Ray Crampton, VP of Engineering at Nitronex.
“Nitronex’s proprietary GaN-on-Silicon process has a significant advantage over our competitors using SiC substrates. Our superior starting substrate quality and cost structure allow us to develop high performance, large area MMICs at competitive prices which gives us the freedom to solve customer problems in ways our competitors can not.”
Nitronex’s qualified MMIC process is based on a 28V, 0.5Ìm gate length GaN HEMT and features high voltage capacitors, air bridges, through-wafer vias, nichrome and epi resistors, and two levels of metal interconnect. Furthermore, a 3.5Ìm plated gold top metallization results in low loss inductors, and a high resistivity silicon substrate is used which supports low loss transmission lines to over 20 GHz.
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