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the material, determined by its spin direction. This property is known as “spin-momentum locking.” “The surface of a topological in-


sulator is like a well-organized divid- ed highway for electrons, where elec- trons having one spin direction trav- el in one direction, while electrons with the opposite spin direction trav- el in the opposite direction. They can


August, 2017


electric current on the surface. The researchers could control


the orientation of spin of the elec- trons, as well as the direction and the strength of the electric current in the topological insulator bismuth tel-


luride (Bi2Te3). According to the re- searchers, this flexibility has not been available before. All of this was accomplished


without applying an external electric voltage, demonstrating the potential of efficient conversion from light en- ergy to electricity. The findings are


The transfer of spin-oriented electrons between a topological insula- tor (orange layer) and a conventional semiconductor (blue layer). (Image credit: Weimin Chen)


travel fast in their designated direc- tions without colliding and without losing energy,” says Yuqing Huang, a Ph.D. physics student at Linkoping University. These properties make topologi-


cal insulators promising for spintron- ic applications. However, one key question is how to generate and ma- nipulate the surface spin current in topological insulators. The research team has taken


the first step toward transferring spin-oriented electrons between a topological insulator and a conven- tional semiconductor, generating electrons with the same spin in galli- um arsenide (GaAs). To achieve this, they used circu-


larly-polarized light, in which the electric field rotates either clockwise or counter-clockwise when seen in the direction of travel of the light. The spin-polarized electrons could then be transferred from GaAs to a topological insulator, generating a directional


significant for the design of novel spintronic devices that exploit the in- teraction of matter with light, a tech- nology known as “opto-spintronics.” “We combine the superior opti-


cal properties of GaAs with the unique electrical properties of a topo- logical insulator. This has given us new ideas for designing opto-spin- tronic devices that can be used for ef- ficient information storage, ex- change, processing, and readout in future information technology,” says Weimin Chen, a professor who led the study. The research was performed in


collaboration with scientists from the Chinese Academy of Sciences in Shanghai. It was financed with sup- port from, among others, the Swe - dish Research Council, the Swe dish Government Strategic Research Area in Materials Science on Func- tional Materials at Linköping Uni- versity, the Swedish Foundation for Strategic Research, the Key Pro- gram of Natural Science Foundation of China, and the Natural Science Foundation of China. r


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