September 2025
www.us-tech.com
productronica: GaN and SiC Continue to Gain Traction
MUNICH, GERMANY — From November 18 to 21, the electron- ics industry will meet in Munich at productronica, the world’s leading trade fair for electronics development and production. One of the focus topics this year will be power electronics, as they are of central importance for electromobility or the decar- bonization and digitalization of the economy. The trade fair will give visitors a comprehensive insight into the world of GaN, SiC and co. The conceptual and technical sponsor of the trade fair is the VDMA Productronic department. Power electronics are a cen-
tral component of modern tech- nologies and can be found in power supply units, power sup- plies, and motor drives. Power semiconductors are essential, for example, for converting direct cur- rent into alternating current and vice versa. Modern power elec- tronics therefore play a key role in the energy and mobility transi- tion, decarbonization, and digital- ization — all of which will be focus topics at productronica 2025. Analysts from Markets and
Markets estimate the CAGR for power electronics at 5.7% through 2028, with the market size increasing from $46.2 billion in 2023 to $61 billion in 2028. While North America previ-
ously led the way as a producer of global power electronics with over 30 percent of the market share, the APAC region (Asia Pacific) in particular is set to become the forerunner in the future in the global market with a market vol- ume of around 54 percent. Europe is, however, also making confident strides, with well-known semicon- ductor manufacturers like Infin - eon Technol ogies and Vishay cur- rently investing in new produc- tion facilities. The most important growth
drivers in the field of power elec- tronics are the so-called wide bandgap semiconductors gallium nitride (GaN) and silicon carbide (SiC). Although they are current- ly still more expensive than con- ventional power semiconductors such as silicon IGBTs or MOSFETs, they can switch much higher voltages and frequencies. The biggest advantage of
GaN and SiC is the wide bandgap of 3.4 eV for GaN and 3.2 eV for SiC compared to 1.1 eV for Si IGBTs. That provides advantages such as efficient heat dissipation, high switching frequencies, high breakdown strength, and low power consumption, hence high energy efficiency. Compared to SiC, GaN is predestined for high frequencies and is therefore often
used for server and low-power applications, while SiC has advantages over GaN at high power levels and is therefore pre- ferred in applications such as energy supply, transport, or motor controls. Si IGBTs are currently even
more cost-effective than wide bandgap technologies and im - press with their fast switching speeds and high current carrying capacity.
At productronica 2025, ex -
hibitors from the semiconductor ecosystem will show how they are solving these challenges with a good instinct for the right tech- nologies and an innovative spir- it. F&S Bondtec, for example, will show how the company is using the right connection tech- nology to manufacture high- quality machines for chiplet pro- duction that meet miniaturiza- tion requirements. Panasonic
also always offers the right con- nection with its convincing SiC packaging solutions. Leading high-volume packaging technolo- gies for SiC and GaN will be pre- sented by ASMPT, for example, and Yamaha Robotics will show- case suitable robots for packag-
ing semiconductor components. Contact: Messe München,
AM Messesee 2, 81829 Munich, Germany % +49-89-94-920-720 Web:
www.messe-muenchen.de r
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