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NEW PRODUCT SHOWCASE EDITOR’S CHOICE


ENERGY PROFILING FOR POWER-SENSITIVE IOT DEVICES The Energy Profiler tool offers a


design easier, faster and more productive. The IoT development platform, enabling concurrent microcontroller (MCU) and wireless design, Simplicity Studio now features an enhanced real-time Energy Profiler tool, faster execution speed and an easier installation process. Developers can optimise their IoT designs for ultra- low energy and long


S


ilicon Labs has announced a new release to its Simplicity


Studio development platform, designed to make IoT system


battery life with the intuitive user interface, improved usability, and greater energy profiling accuracy and reliability.


new Energy Score feature, by enabling developers to benchmark the energy efficiency of their IoT system designs. The Energy Score helps developers determine which design iteration provides the highest score directly correlated to battery life. A higher score (on a 0 to 10 scale) indicates lower energy consumption and longer battery life. The Energy Profiler also allows developers to save sessions, enabling them to compare relevant data from their saved sessions to gain a better understanding of how design modifications impact overall energy efficiency. www.silabs.com


M


ission critical applications


such as space and aviation require sophisticated electronic systems, so high reliability components are vital for ensuring long-term system operation. To support space flight, new radiation hardened multiplexers have been released by Intersil Corp, offering greater protection and increased overall performance, as featured left. Similarly, though not quite as


demanding, a new release to the Silicon Labs development platform has been announced to improve energy profiling for power-sensitive IoT devices. Drawing on both high reliability and


RADIATION HARDENED MULTIPLEXERS FOR SPACE FLIGHT


Intersil Corporation has introduced the ISL71840SEH and ISL71841SEH, new radiation hardened (rad hard) multiplexers that are claimed to offer best-in-class electrostatic discharge (ESD) protection, and high signal chain accuracy and timing performance. The ISL71840SEH 30V 16-channel multiplexer is a drop-in replacement for the company’s HS9-1840ARH, which the company advises has been aboard nearly every satellite and space exploration mission, including NASA’s recent Orion spacecraft flight test. For applications with form factor constraints, the new ISL71841SEH 30V 32-channel multiplexer offers high performance and 41% reduced board space compared with an ISL71840SEH two-chip solution. The ISL71840SEH and ISL71841SEH rad hard multiplexers deliver ultra-high performance in the most


demanding environments by leveraging Intersil’s proprietary silicon on insulator process, which provides single event latch-up (SEL) robustness in heavy ion environments. The enhanced 8kV ESD protection feature of these devices eliminates the need for costly external protection diodes on the input pins. The reduced RON of 500Ohms at +/-5V and propagation delays of less than 800ns increases the overall performance and accuracy of telemetry signals processed and multiplexed into an analogue-to-digital converter (ADC) input. The ISL71840SEH and ISL71841SEH offer over-voltage protection on a per-switch basis to maintain the


continuous processing of telemetry test points. If any input channel experiences an over-voltage condition, the remaining channels continue sending data to the ADC. Both multiplexers provide a “cold spare” redundant capability, allowing the connection of 2-3 additional unpowered multiplexers to a common data bus. This is an especially important feature for mission-critical space flights lasting up to 20 years. If required for any reason, a redundant multiplexer is immediately activated. Both multiplexers provide a wide supply range with split-rail operation from +/-10.8V to 16.5V and an absolute maximum of +/-20V, providing designers with plenty of de-rating headroom. Intersil Corporation www.intersil.com


optimising power capability in IoT applications, Renesas has released two new series of advanced low power SRAM featuring an innovate memory cell technology for improved reliability and longer battery life, as featured below. For more of the latest new product


releases see our new product showcase. Michelle Winny - Editor


Murata has announced three line-up additions to its GRM series of 1206 and 1210 size monolithic ceramic capacitors (MLCCs) above 100uF. The GRM series 1206 size additions include 150uF and 220uF capacitors. Both these have a rated voltage of 6.3V. The slightly larger 1210 size adds a 330uF MLCC to the series with a rated voltage of 4V. All three new devices have a M (+/20%) deviation rating and X5R temperature characteristics such that the capacitance change is no more than +/- 15% within a temperature range of -55 to 850 www.murata.com


C.


16- AND 32-MEGABIT ADVANCED LOW POWER SRAMS USING 110nm process


Renesas Electronics has released two new series of Advanced Low Power SRAM (Advanced LP SRAM). Fabricated using the 110- nanometer (nm) process, the new RMLV1616A Series of 16-megabit (Mb) devices and the RMWV3216A Series of 32Mb


32 JULY/AUGUST 2015 | ELECTRONICS


devices feature an innovative memory cell technology that aims to improve reliability and aid longer battery operation. The recent demands for highly secure and reliable user systems are driving increased demand for highly reliable SRAM, which is used to store important information such as system programs and financial transaction data. The prevention of soft errors caused by alpha rays and cosmic neutron rays is a significant issue. Typical measures to deal with this problem include embedding an


error correcting code (ECC) circuit in the SRAM or user system to correct any soft errors that occur. There are limits, however, to the error correction capabilities of ECC circuits. For example, some cannot correct simultaneous errors affecting multiple bits. Renesas’ Advanced LP SRAM


devices feature exclusive technology in their memory cells that achieves soft error resistance over 500 times that of conventional Full CMOS memory cells. Renesas Electronics www.renesas.eu


/ ELECTRONICS


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