This page contains a Flash digital edition of a book.
INDUSTRY GaN DEVICES


Many different applications are enabled by WIN Semiconductor Foundry Services


million hours and an activation energy of 2.1 eV for a peak channel temperature of 238 °C. These findings are in line with recent reports in literature (see Figure 5).


On its own, an excellent process for producing GaN HEMTs is of little value to designers – it needs to be backed up with a comprehensive process design kit providing accurate modelling and supporting data. We have met this need and offer a proprietary, scalable model that can simultaneously predict GaN HEMT performance under DC and pulse operating conditions, and provide a good prediction of large- signal characteristics (see Figure 6).


This model, which is supported in both Agilent ADS and AWR Microwave Office software platforms, also includes comprehensive passive modelling. This exploits our expertise in passive components, with


Figure 6. Model verification for one-tone characteristics at 10 GHz measured with 50 Ω termination for a 1.25 mm,


10 x 125 μm device. Good fit obtained for various quiescent Idq conditions. Note that symbols and lines represent measured and simulated data, respectively.


the model modified for differences in substrate and epitaxial materials. Engineers that are armed with this toolkit and use our GaN fabrication services are well placed to tap into the many, growing opportunities for this wide bandgap transistor. During the next decade, it is sure to become the incumbent technology in many parts of the RF domain.


Figure 5. Mean-time-to-failure (MTTF) performance for the 0.25 μm GaN-on-SiC process. Activation energy is 2.1 eV and MTTF is 1 million hours at a peak junction temperature of 238 o


C.


£ The authors would like to thank all the members within WIN Semiconductors who supported the GaN technology development, including the characterization, modelling, reliability, manufacturing, logistics, industrial engineering, customer engineering, sales and marketing, and quality control teams.


58 www.compoundsemiconductor.net October 2014 Copyright Compound Semiconductor


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76