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INDUSTRY GaN DEVICES


needs, benefits that are highly welcome in the field of avionics. What’s more, GaN devices could replace travelling wave tubes for phase shifters.


GaN will also start to displace GaAs in some applications. Low-noise amplifiers based on GaN are more rugged than their GaAs counterparts, so circulators or isolators can be removed from the antenna path. Meanwhile, for power amplification, GaN delivers more power per unit area.


Why WIN? To address all of these markets, WIN Semiconductors is offering a comprehensive portfolio of GaN technologies from sub-GHz to 40 GHz, including power amplifiers, low-noise amplifiers, RF switches and passive components. Our flexible and open foundry approach enables these technologies to be optimized to meet customer needs. In addition, they can be paired with our extensive GaAs technology, allowing customers to enjoy the best of both worlds.


Another advantage that we have is that we can apply lessons to GaN manufacturing that we learnt from increasing our GaAs manufacturing volume,


which is upwards of 24,000 150-mm wafers per month. This provides us with a competitive edge for cycle time, customer service and support, breadth of technologies, and competitive prices due to economies of scale.


If GaN devices are to become a mainstream, mass production technology, long-term demand for them will only exist if they can be manufactured in a manner that yields stable, reliable and repeatable products. Significant progress has been made by material suppliers, leading to better-quality semi-insulating SiC substrates with fewer defects and greater consistency.


This has been backed up by advances by suppliers of epitaxial growth services, with improved material quality enabling a stable supply chain. Thanks to these breakthroughs, optimising device processing is quicker than ever, because experiments produce far fewer ambiguous results, so learning is now very fast.


In comparison, GaN-on-silicon technology is not as mature. High defect densities impact material quality and repeatability, and there are also issues associated with excessive wafer warpage and losses associated


Copyright Compound Semiconductor October 2014 www.compoundsemiconductor.net 55


Automation on WIN’s GaN- on-SiC wafer processing line


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