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CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY


Volume 20 Issue 7 2014


34


28 Perfecting GaN-on-silicon power electronics


Inserting rare earth oxides increases material quality, trims wafer bow and boosts transistor performance.


34 Faster, more frugal, greener VCSELs


VCSELs that excel in speed and efficiency can aid data centres and play a role in night vision, ultra-high density magnetic storage, cosmetics and healthcare.


41 Keeping cool with diamond


By sucking heat from GaN HEMT better than any other substrate, diamond enables a dramatic reduction in finger spacing.


48 Slashing GaN costs with silicon


Production costs for GaN-based devices will plummet when epilayers are formed on 200 mm silicon.


4 www.compoundsemiconductor.net October 2014 Copyright Compound Semiconductor


54 Increasing the availability of GaN HEMTs


A robust, reliable foundry process will spur a proliferation of GaN applications


60 Fantastic foundation yields great devices


GaN substrates formed from ammonothermal growth underpin the fabrication of devices delivering outstanding levels of performance.


66 Accessing the mid-infrared and beyond


Merging the quantum cascade laser and transistor promises new applications involving mid-infrared wavelengths through to terahertz frequencies.


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