THE FUTURE OF SEMICONDUCTORS HAS ARRIVED…
III-N MOCVD HEMT
Rare Earth Oxide (REO) Silicon
GaN-on-Si Epiwafers
Translucent’s revolutionary GaN-on-Si technology employs a patented Rare Earth Oxide (REO) layer that electrically isolates the device layers from the substrate and also provides a physical barrier to stop silicon diffusion.
• Insulating REO buffer isolates GaNfrom silicon • REO enables superior high voltage device performance at a competitive price
Germanium Silicon
Ge-on-Si Epiwafers
Translucent’s germanium-on-silicon technology forms the foundation for our photonics materials and multi-junction solar cells for Concentrated Photovoltaic (CPV) applications.
• Germanium directly on silicon • Tailored bandgap via Group IV alloys
a subsidiary of Silex Systems Limited (ASX: SLX)
Translucent Inc. 952 Commercial Street, Palo Alto, CA94303, USA
sales@translucentinc.com www.translucentinc.com Tel: +1 650-213-9311 x229
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