news digest ♦ compound semiconductor ♦ product news
also been very active in the community, serving as chairman of the Business Coalition, Greater Phoenix Leadership, Greater Phoenix Economic Council, Greater Phoenix Chamber of Commerce, United Way Campaign, and as a director for many other civic organizations. He has received numerous awards and honors including the National Americanism Award from the Anti-Defamation League and an Honorary Doctorate of Letters from Northern Arizona University.
Xi An Zoomview follows the trend ordering 2 CRIUS reactors 2010-06-24
Aixtron has reported it has a new order from existing Chinese customer Xi An Zoomlight (ZoomView). The order is for two CRIUS production deposition systems in a 31x2 inch configuration.
Xi An ZoomView placed the order in the fourth quarter of 2009, and will use both reactors for GaN HB-LED production. The systems will be delivered over the second to third quarter period of 2010 with the local Aixtron support team installing and commissioning the new reactors at the company’s new production facility.
Chief Technical Officer of Xi An ZoomView, Li PeiXian commented, “The primary reason we have selected the Aixtron MOCVD systems is because of their good margin for further uniformity tuning. This is very important for high end HB LED production. Secondly, our technical partner XI DIAN University has been entirely satisfied with their Aixtron SiC MOCVD system and its performance. The good productivity plus the responsive local process and engineering support convinced us that AIXTRON systems were the best choice for us.”
Ostendo & Oxford unveil GaN-on-Sapphire substrates 2010-06-04
The latest offering provides increased efficiency over conventional structures grown on c-plane GaN substrates for HBLED and Laser Diodes.
Ostendo Technologies and Technologies and Devices International (TDI), a subsidiary of Oxford Instruments, are marketing their Semi- Polar (11-22) GaN layer on sapphire substrate wafers.
Produced using Ostendo’s design and TDI’s Hydride Vapor Phase Epitaxy (HVPE) technology, the joint development provides High Brightness Light Emitting Diode (HBLED) and Laser Diode developers to increase optical efficiency over structures grown on c-plane GaN substrates.
Fujitsu unveils high-performance ultra-low noise transistor 2010-06-04
Fujitsu has developed the world’s highest- performance indium phosphide-based high electron mobility transistor (HEMT).
The product operates at the millimeter band frequency level of 94 Ghz and can provide range extension of up to 20 per cent for wireless transmissions.
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www.compoundsemiconductor.net July 2010
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