review news Expanding Precursor Capacity
Dow Electronic Materials will increase its TrimethylGallium (TMG) manufacturing capability by 60 tons per year to try to meet escalating LED demands. Dow Electronic Materials, a business unit of Dow Advanced Materials has a multi-phase plan to expand its TMG production capacity to meet the surging global demand for the material in the electronics market. The expansion plan includes adding significant TMG capacity in the United States at existing facilities to address short-term demand as quickly as possible.
In addition, Dow Electronic Materials will build a new metalorganic precursor manufacturing plant in Korea, which is expected to begin operating in early 2011, to create capacity for long-term demand. Total additional TMG capacity resulting from the multi-phase plan is expected to be 60 metric tons per year.
“We are excited that we can greatly expand the supply of our high-purity, electronic- grade precursor materials to our customers with this additional manufacturing capacity,” said Joe Reiser, global business director, Metalorganic Technologies, for Dow Electronic Materials.”
“We are committed to delivering a reliable supply of high-quality materials to our
customers and providing them with the service and technical expertise that they expect from a market leader. We will continue to work closely with our customers to meet both near- and long-term needs.”
“Demand for TMG today is being driven by explosive growth in LED backlighting of LCD TVs with the potential of future growth of LEDs in the general lighting market,” said James Fahey, global general manager, Growth Technologies for Dow Electronic Materials.”
“The LED market is growing rapidly, particularly in Korea, Taiwan and other countries in the Asia-Pacific region where there is a large display manufacturing base and semiconductor manufacturers are building and converting capacity to manufacture LEDs.”
The new metalorganic precursor plant in Korea will be located in Cheonan, approximately 85 kilometers south of Seoul. Dow Electronic Materials expects to expand the site in the future to manufacture other metalorganic materials in addition to TMG. Dow Electronic Materials currently manufactures TMG and other metalorganic precursors in North Andover, MA, while packaging is done in both North Andover, MA, and Taoyuan, Taiwan.
Ascent Solar Soar with Massive DARPA Contract
DARPA awards Ascent with Multi-Million Dollar Contract through High-Efficiency Low-Cost Portable Photovoltaics (PoP) Program for Copper Indium Gallium (di)Selenide (CIGS) modules. Ascent Solar Technologies will supply its flexible thin-film solar modules produced using CIGS technology to the Defense Advanced Research Projects Agency (DARPA).
Under the Low-Cost Lightweight Portable Photovoltaics (PoP) solicitation, the ASTI- led program, entitled “Flexible High- performance Tandem-junction PV Array”, consists of three gated phases, the first of which is 18 months and has an approximate contract value of $3.8M. The entire program is anticipated to continue over the next 54 months. The goal of PoP is to demonstrate low-cost, lightweight photovoltaics (PV) that can stand up to battle conditions and environmental extremes while delivering a
power conversion efficiency of 20% or greater by the end of the program.
“We are excited that DARPA selected our team for the PoP project,” stated Farhad Moghadam, President and CEO of Ascent Solar. ”In order to meet the aggressive goals of performance, capacity, and military toughness, our team has put together a definitive plan that combines our flexible CIGS production experience and enhanced packaging technologies being developed.
RFMD unveils an industry-first for 5GHz band
The integrated 3-stage PA Front End Module (FEM) provides high gain and is claimed to have the best-in-class efficiency over voltage supply levels of 3.0 to 5.0V
RF Micro Devices is marketing the RF5616, a highly integrated 4.9 GHz - 5.8 GHz (ISM band) 3mm x 3mm power amplifier (PA). The RF5616 module is targeted for high-performance mobile PC and embedded applications including access points, gateways, DSL routers, wireless high definition interface (WHDI), and WLAN for wireless video distribution networks.
The RF5616 features a fully matched product design (input/output) and integrated low pass filtering and requires only two external bypass components. RFMD claims that the integrated three- stage PA provides high gain and is an industry-first for 5GHz band front ends. The firm also say it has the best-in-class efficiency and a wide range of voltage supply levels (3.0 to 5.0V), enabling high linear output power of 18dBm to 21dBm.
The RF5616 also features an interstage power detector, reducing sensitivity to voltage supply, temperature extremes and VSWR while improving accuracy of the closed loop power control.
Additionally, a variable linearity mode control enables two modes of operations; a maximum output power and linearity mode, or a more efficient lower output power mode, with a single control pin. Finally, integrated harmonic attenuation eliminates the need for additional filtering, therefore optimizing the efficiency and maximizing output power at the transmit port. A direct-to- battery connection eliminates the need for additional DC circuitry, while integrated input and output matching eliminates the need for additional RF matching. The RF5616 is fully tested and available in an industry-leading 3 mm x 3 mm leadless QFN package with backside ground.
July 2010
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