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The IBand™ technology is synergistic with our thin film Nitride Hybrid product development and will allow upside potential for higher solar conversion efficiencies compared to conventional technologies.”
www.rosestreetlabs.com
Laytec welcomes Korean and Taiwanese PV manufacturers 2010-06-25
Laytec have accepted DKSH Korea and Taiwanese firm, MOS Technology to their distribution network.
Laytec are expanding their distribution network to meet the surging interest in their in-line metrology systems for photovoltaic applications. The firm will cooperate with two new and highly qualified distribution partners in Korea and Taiwan.
Laytec will work DKSH Korea, located in Seoul. The company is part of the privately held Swiss DKSH Group. As a provider of market expansion services DKSH offers a broad portfolio of technical and service solutions. With DKSH’s well established business contacts and market expertise Laytec expects to develop further business for LayTec’s PV section.
In Taiwan LayTec‘ s PV products will be represented by the company MOS Technology. Founded in 1997, the company is located in Zhubei City, Hsinchu County. MOS Technology offers solutions and comprehensive after- sales service, upon the business philosophy of “Innovation, Integration and Solutions“.
Furthermore Laytec will be expanding its headquarter in Berlin; during 2010 they intend to expand their office space by 800 square meters to accommodate their increased staff count which has grown to a total of 60.
Panasonic’s GaN Tetrahertz Detector is Small & Super Sensitive 2010-06-25
Firm’s GaN (Gallium Nitride) Terahertz (THz) Detector does not require cooling and as such, is claimed to be more compact than its competitors’.
Panasonic has developed a Tetrahertz (THz) detector using a Gallium Nitride (GaN) transistor. The detector is claimed to exhibit the world highest sensitivity at room temperature. It is suited to applications in a variety of security or analyzing systems, which will greatly help the wide-spread use of such THz applications in the future.
The GaN detector forms a ‘plasma wave’ of the electrons, in which the electron density is fluctuated as a wave. The plasma wave resonates with the incident THz wave, which is detected as an electric signal at the GaN transistor.
The use of GaN with high electron velocity effectively increases the amplitude of the plasma wave and the extracted electric signal. The detector uses the gate electrode itself as a dipole antenna free from the loss in the transmission lines. In addition, the source and the drain electrodes of the GaN transistor are designed to work as parasitic elements for the antenna, which effectively confine the incident THz wave in the vicinity of the gate.
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www.compoundsemiconductor.net July 2010
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