news review
Templates for Blue & UV LEDs
GaN, AlN, AlGaN, InN, InGaN
MOCVD for nanowires
AIXTRON AG has announced a new order for one CRIUS deposition system from the University of Duisburg-Essen. The order was placed in the fourth quarter of 2009 and the system will be delivered in the second quarter of 2010 for the University of Duisburg-Essen Semiconductor & Optoelectronics Center in Duisburg, Germany. The system will be supplied in a 3x2-inch configuration and comes equipped with a ARGUS multichannel pyrometer.
Prof. Dr. rer. nat. Franz-Josef Tegude, Chair of Semiconductor Technology, comments, “We selected the AIXTRON CCS system as part of the University’s initiative to acquire a nitride material system for the nitride nanowire NaSoL Project. Overall, we have always been very satisfied with the quality of AIXTRON engineering, processes and service. Of course, we also took into consideration our project partnership. “
World leaders in development of Hydride Vapour Phase Epitaxy (HVPE) processes and techniques for the production of novel compound semiconductors
• Templates • Wafer size: 50mm-150mm • Research grade InGaN wafers • Custom design epitaxy • Contract development
• Small and large batch quantities available
Wide range of materials (GaN, AlN, AlGaN, InN and InGaN) on different sizes and types of substrates (sapphire or SiC)
Contact us now!
Email:
plasma@oxinst.com Technologies and Devices International Tel: +1 301 572 7834
www.oxford-instruments.com/tdi1
The NaSoL Project aims to achieve production of GaN- and (Al,Ga,In)N-based semiconductor nanowires for improved
efficiency solar cells and LEDs. The AIXTRON CCS system will provide us with a firm foundation for a smooth and rapid development program for all our partners.” NaSoL, which stands for “Halbleiter- Nanodrähte für Solarzellen und Leuchtdioden”*) will result in a new generation of semiconductor nanowires for solar cells and LEDs.
The intention is to replace more costly traditional semiconductor fabrication techniques with MOCVD. Nanowire-based materials have a number of excellent characteristics and offer improved economics. They are not only significantly more efficient both in absorption and in the emission of light, but also promise very low losses in energy transport.
The nanoscale coaxial core-shell heterostructure of these devices has a larger surface area so it absorbs more light and delivers better efficiency. In addition, the new technological process offers device fabrication on lower cost substrates.
Development Centre Opens near Boston
NXP Semiconductors is opening a high performance radio frequency (RF) product creation center (PCC) in Massachusetts. The new facility will focus on the design of RF and Microwave integrated circuits (ICs) used in demanding applications such as defense & aerospace, Industrial, Scientific and Medical (ISM) satellite receivers and broadband communications.
“This new product creation center builds upon NXP’s 50-year heritage in RF innovation, further refining, localizing and extending that competence to meet customer demands and create innovative applications,” said John Croteau, Senior VP and general manager of the High Performance RF and Lighting business lines at NXP Semiconductors. “Process, packaging and circuit design innovation remain pillars of our strategy, yielding leadership positions in technologies such as SiGe:C, LDMOS and JESD204A.”
Ian Gresham, general manager Boston PCC, NXP Semiconductors, pointed out, “The deep pool of experienced and talented RF designers, the active RF customer base and the closeness to Europe make Boston
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the ideal location for the new NXP PCC. The PCC team will endeavor to push the limits of our high performance RF & Microwave products overcoming market challenges through innovation.”
NXP also has a long history as one of the industry’s leading compact model developers, so all technologies are supported by their associated, fully characterized RF models. This in-house process supports the company’s global design teams in leading innovation and the development of products and solutions for some of the most pressing RF front-end challenges.
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