September 2026
SANTA CLARA, CA — ROHM Semiconductor has developed a second- generation terahertz (THz) wave oscilla- tion device using semiconductor elements known as Resonant Tunneling Diodes (RTDs). ROHM is making the device available via the RTD-EVK-G2 Terahertz Wave Device Evaluation Kit, which in- cludes a sample device, cable, and evalua- tion board. The kit enables companies and research institutions to evaluate THz wave oscillation and detection in a com- pact development environment. Occupying the frequency region be-
tween radio waves and light, terahertz waves combine the penetrating proper-
ties of radio waves with the straight-line propagation of light. Because they exhibit unique ab- sorption characteristics for poly- mers, moisture, and other sub- stances, they are expected to be used in non-destructive testing without ionizing radiation, med- ical and healthcare applications, and high-resolution radar sens- ing. However, conventional tera- hertz systems require large equipment and high implementa- tion costs, making it difficult for new companies and research in-
Kinetic Technologies™ Introduces
5A eFuse SAN JOSE, CA — Kinetic Technologies has unveiled its KTS1630 device. This is a highly integrated 5A eFuse designed to improve the safety, reliability and power efficiency of consumer and industrial systems operating from 5V and 12V power rails. Modern electronic systems
require increasingly robust pro- tection as power density rises and designs become smaller. The KTS1630 helps protect sensitive downstream components from excessive current, short circuits, thermal events and uncontrolled inrush current while minimizing voltage loss and external compo- nent count. Its integrated 31mW typical power MOSFET supports efficient high-current operation across a wide 4.5V to 18V input range.
The device’s adjustable 1A
to 5A current limit enables de- signers to optimize protection for specific system loads rather than relying on a fixed protection threshold. A programmable out- put slew rate controls inrush cur- rent during startup, helping pre- vent input supply droop, connec- tor stress and unintended sys- tem resets when large capacitive
loads are connected. Contact: Kinetic Technol -
ogies, 6399 San Ignacio Avenue, Suite 250 % 408-746-9000 E-mail:
info@kinet-ic.com Web:
www.kinet-ic.com
THz wave oscillation device.
www.us -
tech.com
Page 75 ROHM: Next-Gen Terahertz Wave Oscillation Device
stitutions to enter the field or pursue commercialization. To address the growing demand for
improved signal quality in application development, ROHM has now developed a second-generation terahertz wave os- cillation device. The device maintains the same compact 0.5 × 0.5 mm chip size as the first-generation product while adopting an internal structure that en-
ables higher output power. Contact: ROHM Semiconductor
USA, 2323 Owen Street, Santa Clara, CA 95054 % 408-720-1900 E-mail:
hmueller@rohmsemiconductor.com Web:
www.rohmsemiconductor.com
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