news digest ♦ Power Electronics


to microwave designers, which reduce heat sink requirements and enable smaller terminals and converters with a full GaN HEMT line-up that includes drivers,” said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, TAEC Discrete Business Unit.


“Since Toshiba released its 50W Ku-band product a few years ago, many customers have requested a full line-up of GaN HEMTs, which will simplify the power supply design of Solid-State Power Amplifiers (SSPA) and block up converters (BUC). In addition, small output power applications, such as VSAT, can benefit from GaN HEMTs, making fan-less or very small equipment possible,” he concluded.


In 2009, Toshiba announced the addition of the Extended Ku-band TGI1314-50L to its GaN power amplifier family, which operates in the 13.75GHz to 14.5GHz range for Satcom to support SSPA applications. The TGI1314-50L is now in mass production.


Samples of the TGI1314-25L will be available in the third quarter 2011, with mass production scheduled for the fourth quarter 2011.


Fujitsu develops world’s first GaN HEMT T/R C-Ku band module


The firm’s latest gallium nitride creation enables consolidation of communications equipment into one compact module.


Fujitsu Laboratories has successfully developed what it claims is the world’s first transmitter/receiver (T/R) module using GaN HEMT technology.


It features an output of 10 W and operates in a wide bandwidth range of C-band, X-band, and Ku-band (C-Ku band) radio frequencies over 6-18 GHz.


By combining the world’s best performing GaN power amplifier (PA) developed last year with the newly developed GaN low-noise amplifier (LNA), the researchers achieved a compact T/R module that generates a high-output.


182 www.compoundsemiconductor.net June 2011


This technology makes possible the integration of multiple types of communications equipment—each currently operated at a different frequency range— into a single module, making for the development of smaller, lighter radar equipment and wireless communication systems.


GaN is used as a blue-LED in traffic signal lights, and compared to the conventional semiconductor materials of silicon and GaAs, it features a high saturation carrier velocity and relative resistance to the breakdown caused by voltage. Given these characteristics, GaN HEMTs show promise for high- output and exceptionally efficient operations.


In line with the advance of a network-based society, radio wave demand in a variety of wireless systems is expected to increase even further. For example, aircraft radar typically switches between the C-band, which can detect distant objects and works well in rain, and the X- and Ku-bands which are able to measure physical objects with high- precision.


Currently, this demand for multiple frequency ranges requires different communications equipment each suited to their respective frequency band. However, a single T/R module capable of covering the entire C-Ku band range would meet a variety of needs, allowing systems to become more compact.


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