Compound Semiconductor June 2011

news digest ♦ RF Electronics

MAGX-000912-125L00 1215

1215 960 - 125 peak

MAGX-000912-250L00 250 peak

MAGX-001214-125L00 1400

MAGX-001214-250L00 1400

MAGX-001220-100L00 2000

MAGX-000035-030000 30 average

MAGX-000035-100000 100 average

125 peak 250 peak 100 peak CW 1 - 3500 CW

“M/A-COM Tech leverages more than 30 years of experience in developing industry-leading high power transistors to deliver these top-quality GaN power devices,” stated Chuck Bland, Chief Executive Officer of M/A-COM Tech. “Our highly versatile family of GaN products offers customers a single solution combining both the high power handling and high-voltage operation typically found in silicon LDMOS devices, but with higher frequency performance more often associated with GaAs devices. Innovative solutions for demanding applications like these are what customers have come to expect from the First Name in Microwave—M/A-COM Tech.”

The latest ABI research shows increasing demand for high power, pulsed RF devices in S- and L-band air traffic control, marine, and military radar applications. “M/A-COM Technology Solutions’ silicon based products have been a major force for high power, pulsed RF applications in the S- and L-Band radar market, and the extension into GaN technology positions their product line for continued market leadership”, said Lance Wilson, Research Director, RF Components & Systems.

M/A-COM Tech plans to release additional products that target applications such as L-Band radar, avionics, EW, and MILCOM, as well as general purpose devices later this year.

114 www.compoundsemiconductor.net June 2011

2ms / 10% 960 -

2ms / 10% 1200 -

2ms / 10% 1200 -

2ms / 10% 1200 -

500µs / 10% 1 - 3500

Engineering samples for GaN transistors and pallets are available for qualified customers today from stock although the products are subject to the jurisdiction of the Export Administration Regulations.

RFMD branches out with P2P radio chipsets

The highly integrated chipsets, which employ the firm’s 0.15µm gallium arsenide technology, optimise each front end component for next-generation high- capacity 3G/4G radios using complex modulation schemes.

RF Micro Devices, a designer and manufacturer of high-performance radio frequency components and compound semiconductor technologies, has expanded its product portfolio to include several point-to-point (P2P) radio chipsets targeting the growing cellular backhaul market.

The highly integrated radio chipsets combine multiple RF/microwave radio front end components and expand RFMD’s product portfolio to encompass all critical RF and IF functions in the P2P radio transceiver.

The P2P radio market is growing rapidly as the proliferation of smartphones and the increasing demand for mobile data are forcing cellular operators to expand capacity in cellular backhaul networks. RFMD’s highly integrated P2P radio chipsets help to satisfy operators’ capacity expansion requirements by optimising each front end component for next-generation high-capacity 3G/4G radios using complex modulation schemes.

The front end components deliver industry-leading narrowband performance, enabling the realization of state-of-the-art radio performance. Additionally, the broadband nature of the front end components enables radio designers to maximize design flexibility and simplify inventory bill-of-material control.

Jeff Shealy, general manager of RFMD’s Defence and Power business unit, said, “RFMD is rapidly expanding our product portfolio in support of the Point-to-Point microwave radio market. With the

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