RF Electronics ♦ news digest
Skyworks to showcase new lower power LNAs for 1.5 to 3.0 GHz
The LNAs based on its proprietary gallium arsenide pHEMT based process provide cost competitive solutions for wireless applications.
Skyworks Solutions, an innovator of high reliability analogue and mixed signal semiconductors, has introduced the first in a series of ultra low current, general purpose low noise amplifiers (LNAs).
These are suited to for diverse wireless applications including satellite receiver set-top boxes, Bluetooth headsets, medically prescribed hearing aids, advanced meter reading devices and 2.4 GHz wireless local area networks. These high performance LNAs deliver enhanced receiver sensitivity and wide dynamic ranges facilitating improved signal reception, increased design flexibility and reduced part counts.
“Skyworks is delighted to be expanding our product portfolio with solutions that deliver better performance and are cost competitive for a wide range of markets,” said David Stasey, vice president of analogue components at Skyworks. “In addition, our new low noise amplifiers enable Skyworks to enter new markets – driving intense diversification beyond our proven front-end solutions for mobile devices.”
The miniature SKY67014-396LF is an advanced pHEMT enhancement mode process LNA with an integrated active bias and on-die stability structures. It enables simple external matching and stable performance over varied temperatures.
Skyworks’ enhancement mode pHEMT process allows the device to offer excellent return loss (15 dB typical), stable gain (12 db), low noise (<1 dB) and high linearity (+18 dBm OIP3) while drawing <6 ma of bias current. The SKY67014-396LF offers the designer the ability to externally adjust the supply current to further optimise the amplifier linearity performance for the chosen application. The supply voltage is applied to the RF-OUT/VDD pin through an RF choke inductor and through the VBIAS pin through an external resistor. The supply voltage is adjustable over a range of 1.5 to 5V. The LNA is
manufactured in a compact, 2 x 2 mm, 8-pin dual flat no-lead, restriction of hazardous substances compliant, surface mount technology package.
The device is the first in a series of high performance, low power LNAs targeting broadband wireless applications. Additional footprint compatible LNAs for the 100 – 700 MHz and 700 – 1500 MHz bands will be launched later this year.
Avago unveils two new GaAs LNAs for RF and microwave applications
The new LNA series debuting at IMS 2011 use Avago’s proprietary 0.25 µm gallium arsenide enhancement-mode pHEMT process to deliver low noise figures and high linearity.
Avago Technologies has expanded its high- performance portfolio of RF and microwave components for cellular infrastructure applications with two new series of low-noise amplifiers (LNAs).
The company unveiled the latest additions at the 2011 International Microwave Symposium. Featuring best-in-class noise performance and high linearity, the new MGA-63xP8 LNAs and ALM-11x36 fail-safe bypass LNA modules deliver improved receiver sensitivity for base transceiver stations (BTS) and tower mounted amplifiers (TMA) applications.
The MGA-63xP8 devices and ALM-11x36 modules expand the Avago market-leading LNA portfolio for BTS applications, which leverage the company’s proprietary 0.25 µm GaAs Enhancement-mode pHEMT process to deliver low noise figure and high linearity.
As opposed to a broadband approach, Avago offers series of LNAs with each device optimised for superior end performance at specific frequency operation ranges. Both new LNA series exemplify this philosophy. Reflecting the portfolio’s emphasis on integration, the ALM-11x36 modules can replace large discrete and surface-mount component counts in conventional designs, shortening design cycle time and providing board space savings.
June 2011
www.compoundsemiconductor.net 119
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