RF Electronics ♦ news digest
TriQuint is focused on bringing performance innovation to essential building blocks in the global network. This network is fraught with demand, and it’s not going to let up; by 2015, the amount of mobile data traffic contributed by tablets alone is expected to equal that of mobile data traffic from all devices combined in 2010.*
linear gain blocks that offer useful improvements. They appreciate that design requirements change all the time,” said Alexander Kopp, RF designer, Andrew Wireless Systems / CommScope, Buchdorf, Germany. “A more linear RF signal is very important, and with very low current drain, we can reduce a system’s thermal dissipation. The TriQuint team has offered us great support.”
TriQuint’s two new amplifiers are ideal for 3G/4G wireless infrastructure applications including base transceiver stations, repeaters, boosters, tower- mounted amplifiers (TMAs), remote radio heads, defence/aerospace and other wireless systems requiring high linearity and gain with low power consumption.
TriQuint new base station RFICs deliver high performance that helps ensure more ‘fault-free’ 3G/4G network operation.
TriQuint’s new base station devices, starting with the 0.25 W TQP7M9101, provides high gain and linearity with very low current consumption—just 88 mA in a typical 5 V design. The 0.5 W TQP7M9102 is also now available; it provides highly-linear performance, low current consumption and greater gain.
Setting these amplifiers apart from others now available is TriQuint’s patent-pending integrated protection features that include means to guard against ESD and DC over-voltage electrical spikes.
TriQuint also integrates RF over-drive protection that reduces the chance of damage from high signal levels often seen in systems employing digital pre- distortion linearisation techniques commonly utilised to meet 3G/4G BTS system requirements.
The firm says that unlike other linear driver amplifiers available today, its TQP7M9101 module also integrates matching circuits that eliminate the need externally. These integration benefits reduce the overall BOM and provide easier-to-use solutions that are especially important when fast time-to- market is a key manufacturer strategy.
“TriQuint regularly releases new amplifier and
Cree ships over 10 million Watts of RF transistors and MMIC PAs
The firm has reached a milestone in shipments of its GaN-on-SiC commercial RF power transistors and high power MMIC amplifiers.
Cree, announces that, as of April 2011, the company’s RF business unit has shipped commercial GaN-on-SiC RF power transistor and MMIC products with more than 10,000,000 watts of combined RF output power.
This milestone demonstrates the consistency, reliability and proven performance of Cree’s GaN HEMT and GaN MMIC technology. The 10 million watt figure includes only commercial RF products and excludes an additional 1.5 million watts shipped for GaN MMIC foundry services.
Cree attained this milestone while maintaining a remarkable failure-in-time rate (FIT rate) of less than 10-per-billion device hours, which is up to 80% lower than the typical FIT rates for other RF power transistor technologies.
“We have achieved more than 1.4 billion total hours of field operation for our GaN-on-SiC devices, coupled with reliability that surpasses other high voltage silicon or GaAs technologies. This is the largest known body of fielded data accumulated by any domestic GaN supplier to date and includes not
June 2011
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