Power Electronics ♦ news digest Power Electronics Cree launches discrete 20A
and 50A 650V SiC First member of Cree’s high-power CPW5 diode family to be released in packaged form
Cree, Inc has announced the addition of two new discrete 650V SiC rectifiers to its Z-Rec Schottky diode portfolio.
Rated at 650V blocking voltage and 50A continuous forward current, Cree’s C5D50065D Schottky diode is the first member of Cree’s high power CPW5 diode family to be released in packaged form.
Available in a TO-247-3 package, the C5D5065D provides up to 2000A of non-repetitive surge capability at 25 degrees C, combined with the high continuous current-carrying capability of the CPW5 family. The 50A rectifier is suited for automotive on- board chargers, server power supplies, power conditioning, and high-reliability aerospace and military power systems.
Developed to provide increased switching efficiency through a reduced forward voltage, the CVFD20065A Schottky diode provides 20A of forward current capability with a nominal voltage drop of only 1.35V at 25 degrees C and is the first product to be released as part of Cree’s new family of Low VF Z-Rec Schottky diodes.
POET Technologies has provided a progress update on the 100-nm initiative, on the upgrade of its MBE system and on the technology design kit for the Planar Electronic Technology (PET) subset of the POET process.
POET Tech is a developer of the III-V based Planar Optoelectronic Technology (POET) platform for monolithic fabrication of integrated circuit devices containing both electronic and optical elements on a single semiconductor wafer.
100-nm Initiative
This milestone (M-8) is associated with reducing the feature size of key POET devices to the 100-nm range in scale. The firm had previously achieved sub-200-nm scaling as announced in the first quarter of this year. While work progresses to drive down feature size further, POET Tech says its technical team now believes that it will achieve this milestone in the near-term.
Among the technical challenges addressed by the team are short-channel effects and the development and implementation of a novel technique based on using a non-gold based contact, without liftoff, to achieve self-alignment. This results in a general digital device format for III-V technologies. Many of these processes have been captured as new intellectual property for the company by submission of patent applications.
Peter Copetti, Executive Chairman and interim CEO, notes, “The team has worked relentlessly through multiple hurdles on its way to completion of the 100-nm milestone. The scale-down to sub-100-nm scale will demonstrate our ability to fabricate competitive digital devices with III-V materials to a point that has never been demonstrated before.”
The technical team has targeted the end of the second quarter 2014 for completion of this milestone.
Upgraded MBE
Cree has also taken additional steps to bolster the surge capability of the CVFD20065A, resulting in a forward surge rating of 1400A at 25 degrees C (10µs pulse) – which the company says is the highest among all commercially available 20A, 650V SiC Schottky diodes.
The MBE system is a key piece of process equipment on the POET pilot line. Earlier this year, the company announced that there was a requirement for the MBE system to be taken off-line for maintenance, as well as for source material replenishment and a major upgrade. In anticipation of this, it had used the MBE reactor to produce all material required for the 100-nm initiative, ahead of the scheduled outage.
June 2014
www.compoundsemiconductor.net 99
Equipment and Materials
POET issues update on III-V based initiatives
The firm says the scale-down to sub-100-nm scale will demonstrate its ability to fabricate competitive digital devices with III-V materials for the first time
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