Novel Devices ♦ news digest
are key to meeting industry requirements for low power loss and high switching frequency, until now no suitable solution has existed for evaluating all of the characteristics of those devices,” says Masaki Yamamoto, general manager of Agilent’s Hachioji Semiconductor Test Division. “The B1506A promises to fill this gap by providing complete characterisation for those key power devices in an automated fashion.”
U.S. Pricing and Availability
The Agilent B1506A Power Device Analyzer may be ordered starting July 1. Three models are available - Opt. H21 (20 A), Opt. H51 (500 A) and Opt. H71 (1500 A) - with pricing from $120,000 to $160,000.
GTAT and EVG sign MOU to
advance bonding technology The firms will work together to develop high volume production processes and equipment necessary to bond the ultra-thin sapphire and SiC lamina to engineered substrates such as glass, silicon, and plastics
GT Advanced Technologies (GTAT) has announced several new initiatives aimed at expanding its portfolio of sapphire and SiC solutions for next generation consumer and industrial products.
The company has entered into a memorandum of understanding (MOU) with European-based EV Group (EVG), which specialises in bonding and material handling equipment.
The firms will work together in various collaborative arrangements including jointly developing high volume production processes and equipment necessary to bond the ultra-thin sapphire and SiC lamina, produced by GT’s Hyperion technology, to engineered substrates such as glass, silicon, and plastics.
In addition, GT announced it will begin working with a leading glass substrate producer to develop specially engineered substrate materials that can be bonded to ultra-thin sapphire lamina to create unique composite solutions that expand the reach of sapphire into a broader set of applications.
The company also announced that it has acquired patent- pending technology for producing low-cost, scratch-resistant aluminium oxide coatings for various substrates including glass and plastics.
These coatings are expected to provide some of the durability and scratch-resistant properties of crystalline sapphire at a lower price point to address market opportunities where cost is paramount and not all of the properties of sapphire are required.
GT’s business model will be focused on selling the bonding and coating equipment developed through these initiatives.
“Our sapphire composite material development program is focused on leveraging the combined expertise of GT and our
Novel Devices
Beyond graphene: Boron nitride could advance electronics
cientists have demonstrated that layers in 2D stacks can interact strongly and enlighten researchers on how to control the properties of such heterostructures
Researchers at The University of Manchester have shown how they can control the properties of stacks of two-dimensional materials, opening up opportunities for new, previously- unimagined electronic devices.
The isolation of graphene at the University in 2004 led to the discovery of many other 2D crystals.
While graphene has an unrivalled set of superlatives, these crystals cover a large range of properties: from the most conductive to isolating, from transparent to optically active.
The next step is to combine several of these crystals in a 3D stack. This way, one can create ‘heterostructures’ with novel functionalities - capable of delivering applications as yet beyond the imagination of scientists and commercial partners.
The first examples of such heterostructures already exist. These include tunnelling transistors, resonant tunnelling diodes, and solar cells.
Writing in Nature Physics, the scientists, led by Nobel Laureate Sir Kostya Novoselov, demonstrate that layers in such stacks can interact strongly, which helps the researchers learn how to control the properties of such heterostructures.
By controlling the relative orientation between graphene and underlying boron nitride (BN) - one of the 2D materials and an excellent insulator - the team can reconstruct the crystal structure of graphene.
Both hexagonal and cubic BN are wide-gap semiconductors with a band gap energy corresponding to the UV region. If voltage is applied to h-BN or c-BN, then it emits UV light in the range 215 - 250 nm and therefore can potentially be used as LEDs or
lasers.in graphene and even opening of a band-gap, which might be useful for the functionality of many electronic devices.
Novoselov says, “Research on heterostructures is gaining momentum, and such possibilities for controlling the properties
June 2014
www.compoundsemiconductor.net 107
technology partners in order to build a new market for low- cost and highly-durable substrate solutions for next generation consumer and industrial products,” says Tom Gutierrez, GT’s president and CEO. “These programs enhance our technology portfolio and leverage our significant investment in our Hyperion technology.”
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