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NEWS REVIEW


Brewer Science announce megasonic developer


BREWER SCIENCE, a supplier of advanced materials, processes, and equipment to the microelectronics industry, has announced the fi rst commercial placement of a Cee 300MXD megasonic developer. This developer was commissioned by MicroChem Corp.


The Brewer Science Cee 300MXD megasonic developer applies uniform acoustic energy to spinning substrates to gently dissolve and remove fi lms and residues without damaging fragile device structures.


This precision handling results in stable dimensional control of vertical profi les uniformly across the wafer surface, enabling fabrication of high- aspect-ratio structures for the MEMS, display, compound semiconductor, and advanced packaging markets. Applications include radio-frequency (RF) power, MEMS, sensors, and acoustic wave devices used for wireless communication.


“MicroChem is very pleased to team with Brewer Science on what we believe could be an enabling technology for the future,” said Michael Stan, Applications Engineering Manager for MicroChem Corp. “As the MEMS industry and integrated packaging technology continue to demand higher-aspect- ratio structures for TSV and RDL layers, enhanced development techniques will likely become mainstream.


The cost-effective approach being pioneered by Brewer Science gives a supplier such as MicroChem Corp. the advantage of being able to rapidly prototype formulations and processes to meet these demands,” he added.


The Cee 300MXD megasonic developer gives customers a bridge from the lab to production by allowing them to avoid signifi cant capital investment and is suitable for low-volume prototyping with a seamless transition to high-volume manufacturing.


Cree launch discrete 20A and 50A 650V SiC


CREE HAS ANNOUNCED the addition of two new discrete 650V SiC rectifi ers to its Z-Rec Schottky diode portfolio. Rated at 650V blocking voltage and 50A continuous forward current, Cree’s C5D50065D Schottky diode is the fi rst member of Cree’s high power CPW5 diode family to be released in packaged form.


Available in a TO-247-3 package, the C5D5065D provides up to 2000A of non- repetitive surge capability at 25 degrees C, combined with the high continuous current-carrying capability of the CPW5 family. The 50A rectifi er is suited for automotive on-board chargers, server power supplies, power conditioning, and high-reliability aerospace and military power systems.


Developed to provide increased switching effi ciency through a reduced forward voltage, the CVFD20065A Schottky diode provides 20A of forward current capability with a nominal voltage


Chipset supplier choose TriQuint


TRIQUINT SEMICONDUCTOR has announced a chipset povider has selected its two new high- performance 5GHz WLAN front-end modules for the industry’s fastest commercially available 4x4 MU- MIMO 802.11ac chipset.


Triquint state that with almost 2Gbps total throughput, the chipset streams fl awless, carrier-grade IPTV to multiple devices in full 1080p or 4K Ultra HD resolution.


TriQuint’s modules provide the improved linearity, power consumption and thermal performance critical for delivering high-quality HD video in Wi-Fi set-top boxes and media gateways.


TriQuint also launched a family of three high-performance fi lters to solve challenging Wi-Fi / LTE interference issues. Utilising TriQuint’s bulk acoustic wave technology, these advanced fi lters enable customers to extend Wi-Fi ranges while meeting stringent spectrum regulations worldwide.


“As demand for high-bandwidth Wi-Fi connectivity grows, our customers and chipset partners count on TriQuint to solve the toughest system challenges so they can deliver best-in-class wireless broadband capabilities,” said James Klein, Vice President for Infrastructure and Defense Products.


drop of 1.35V at 25 degrees C and is the fi rst product to be released as part of Cree’s new family of Low VF Z-Rec Schottky diode


Cree has also taken additional steps to bolster the surge capability of the CVFD20065A, resulting in a forward surge rating of 1400A at 25 degrees C (10µs pulse) – which the company says is the highest among all commercially available 20A, 650V SiC Schottky diodes.


“TriQuint continues to drive WLAN innovation and capture design wins for its high-performance BAW fi lters in several applications. We’re leveraging our broad in-house RF technology portfolio and integration expertise to deliver products for the fast-growing WLAN infrastructure connectivity market.”


According to a recent market report, shipments of consumer and enterprise WLAN access points will reach 170 million and 25 million respectively at the end of 2014.


June 2014 www.compoundsemiconductor.net 11


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