Telecoms ♦ news digest
MACOM`s compact mixers come in standard plastic packaging
The new 1.5mm x 1.2mm high IP3 mixer, image reject mixer, and low noise active mixer all incorporate GaAs. They provide an optimal balance of performance, space savings, and cost effectiveness
M/A-COM Technology Solutions (MACOM) has added three new discrete mixers to its portfolio.
The ultra small mixers provide a broad frequency bandwidth in standard surface mount, plastic packages, enabling system developers to achieve new levels of design versatility and cost efficiency for applications spanning test and measurement, electronic warfare, point to point wireless and more.
The MAMX-011021 high IP3 mixer supports high linearity for applications including high bit rate transmitters and receivers. This mixer covers the 5-33 GHz RF frequency range and DC-5 GHz IF frequency range, integrating a single ended cold FET structure and diplexer for approximately 9 dB of conversion loss with +22 dBm IIP3 to ensure low distortion. This mixer incorporates GaAs integrated circuits.
The MAMX-011022 image reject mixer is targeted at medium data rate, long haul, low noise systems, and is optimized for upconversion and downconversion. This mixer provides image rejection of 18 dB and covers the 5-28 GHz RF frequency range and DC-5 GHz IF frequency range, with conversion loss of 12 dB typical. This mixer incorporates GaAs and silicon Integrated circuits.
The MAMX-011023 low noise active mixer is designed for down frequency conversion and supports very low noise of 7 dB typical. This mixer covers the 4-23 GHz RF frequency range and DC-8 GHz IF frequency range, and supports conversion gain of 7 dB typical and low power consumption at 3v/15mA. This mixer is fabricated using a GaAs process which features full passivation for increased performance and reliability.
All three of MACOM’s new mixers are available in surface mount, industry standard plastic TDFN packaging, and are sized at 1.5mm x 1.2mm.
“These new additions to MACOM’s growing portfolio of mixers are ideally suited for wideband applications for which performance, ease of use and cost effectiveness are key considerations,” says Tom Galluccio, Product Manager, MACOM. “The frequency bandwidth coverage, small size and design flexibility enabled by these new mixers is unmatched by competing plastic packaged products.”
MACOM’s new mixers are sampling to customers today. ALP275:
The ALP275 is W-band 2.125 mm2 InP HEMT ultra-low-noise amplifier that operates between 71 and 96 GHz. This power amplifier provides greater than 26 dB of linear gain, 3 dB typical Noise Figure and P1dB of 4 dBm (2.5 mw). It is suited to E-Band and W-Band communications links.
June 2014
www.compoundsemiconductor.net 81
Northrop Grumman sampling tiny InP ultra LNAs
The indium phosphide devices are designed for commercial and military use
Northrop Grumman has developed two high performance Monolithic Microwave Integrated Circuit (MMIC) broadband ultra-low-noise amplifiers (LNA) that are in production for immediate delivery.
The InP high electron mobility transistor (HEMT) LNAs are for use in E-band and W-band commercial, civil and military applications such as communication links, sensors, millimetre- wave imaging, radars and digital microwave radios.
The compact die design of each LNA considerably reduces footprint size and exhibits very good ultra-low-noise performance and high gain.
“The LNAs are the initial release of products designed with the company’s InP process, a powerful semiconductor technology that has successfully been used in Northrop Grumman’s advanced military communication systems,” says Frank Kropschot, general manager, Microelectronics Products and Services at Northrop Grumman. “For the first time, Northrop is offering products for similarly demanding commercial applications.”
Product descriptions ALP283:
The ALP283 is a W-band 1.7 mm2 InP HEMT low-noise amplifier that operates between 80 and 100 GHz. This power amplifier provides 29 dB of linear gain, 2.5 dB typical Noise Figure and 1dB gain compression power (P1dB) of 3 dBm (2 mw). It has a 2 dB typical average noise figure from 80 - 100 GHz. It is ideally suitable for W-Band millimetre-wave imaging applications, sensors and communication links.
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