March, 2013
www.us-tech.com
Page 83 AOS Intros Power MOSFET Packaging
Sunnyvale, CA — Alpha and Omega Semicon ductor Limited has intro- duced a new patent-pending packag- ing technology called XSFET™. The technology incorporates exposed- source packaging whereby the bottom of the package is the “source”, which enables power designers to remove heat more effectively to the PCB ground plane. Components can also be “top-exposed” or “non top-exposed” depending on design criteria. The top-exposed version deliv-
ers a significant increase in heat transfer, which helps to reduce power losses in a system by keeping the die cooler.
The exposed-source technology
allows electronic designs to achieve higher current density while keep- ing components operating cooler. Differing from some of the existing double-sided cooling packaging options in the market today, AOS’s new exposed-source packaging solu- tion offers standard lead-frame based board mounting in a fully encapsulated DFN molded package, minimizing the thermal discrepancy between the device and the PCB while offering near zero parasitic inductance with its layout friendly footprint. Utilizing the company’s new
30V AlphaMOS silicon technology together with exposed-source pack- aging, AOE6580 and AOE6580T (with top-exposed option) are report- edly the best-in-class 30V N-channel devices in the market today. Both devices are optimized for high per- formance demanding motor control, OR’ing, and E-fuse applications.
Crystek Intros 183-219 MHz
SMD VCO Fort Myers, FL — Crystek’s CVCO55FL-0183-0219 VCO (Voltage Controlled Oscillator) operates from 183 to 219MHz with a control voltage range of 0.5 to 4.5V. This VCO has a typical phase noise of –123dBc/Hz at 10kHz offset and reportedly has excellent linearity. Output power is typically +8.5dBm.
Their very low on-resistance (RDS(ON) = 0.95mW max @10VGS) in exposed- source DFN 5 x 6 package also make
these devices very attractive for power supplies in com- puting, telecom, and high power density point-of-load sockets.
Optimized for ultra-low
conduction and switching losses, AOE6580 and AOE6580T minimize power losses in applications, thus providing power designers the flexibility in optimizing losses, performance, space, and cost. Other models, includ-
ing AOE6770T and AOE6 -
772T, offer very high efficiency in server and high-end notebook appli- cations by utilizing the combination
of 25V AlphaMOS silicon technology and exposed-source packaging tech- nology with the top-exposed option in industry standard DFN 5 x 6 foot- print. AOE7770T completes the solution as high-side MOSFET by combining exposed-source technolo- gy in compact DFN 3 x 3 footprint with top-exposed option. Models AOE6770T, AOE67 72T,
AOE7770T, AOE6580, and AOE6 - 580T are in halogen-free DFN pack- ages and are MSL1 rated. They are
all 100 percent UIS and Rg tested. Contact: AOS, 475 Oakmead
Pkwy, Sunnyvale, CA 94085 % 408-830-9742 fax: 408-830-9749
New power MOSFET packaging aids cooling.
E-mail:
Inquiries@aosmd.com Web:
www.aosmd.com
Voltage controlled oscillator. Engineered and manufactured
in the USA, the model CVCO55FL- 0183-0219 is packaged in the indus- try-standard 0.5 x 0.5-in. (12.7 x 12.7mm) SMD package. Input volt- age is 5 V, with a max. current con- sumption of 25mA. Pulling and Pushing are mini-
mized to 0.5MHz and 0.5MHz/V, respectively. Second harmonic sup-
pression is –20dBc typical. Contact: Crystek Corporation,
12730 Commonwealth Drive, Ft. Myers, FL 33913 % 800-237-3061 or 239-561-3311 fax: 239-561-1025 E-mail:
sales@crystek.com Web:
www.crystek.com
See us at NEPCON China Booth 1H65
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