Equipment and Materials ♦ news digest
GeneSiC bare dies marketed by Micross
The pioneer in silicon carbide technology is offering its products to industrial, military, aerospace, and energy customers
GeneSiC Semiconductor has signed an agreement establishing Micross as a global supplier of GeneSiC’s bare die products.
The driving force behind the agreement is the shared commitment of both companies to increase the availability of SiC bare die to industrial, military, aerospace, and energy (particularly, drilling and exploration) customers.
For years, silicon has been the building block of semiconductor design and fabrication because of its natural abundance, processing ease and relatively useful, although limited, temperature range. SiC, which is a manmade compound, offers enhanced performance, a broader temperature range, greater reliability, and natural radiation resistance.
Until recently, challenges and costs associated with SiC production had limited its use among semiconductor manufacturers, but GeneSiC, with its design and fabrication advances, says it has successfully increased yields. This has resulted in more competitive pricing and offerings, such as GeneSiC’s Schottky diodes, which offer significant design and performance advantages.
Extending those advantages to bare die customers will be Micross’ role under the new agreement. As the leading independent distributor of die products worldwide, Micross has both the product and assembly expertise required to certify the GeneSiC bare die for high-temp/high-reliability applications, as well as the sales channels needed to reach potential customers around the globe.
What’s more, with its technical knowledge and resources, Micross can provide long-term product support to all die customers.
“This agreement is a natural fit,” says GeneSiC’s Chief Business Development Officer, Michael DiGangi. “With Micross’ marketing and product support, we can confidently grow this part of our business, knowing that our die customers will be
served in a manner second to none.”
Tony Hamby, Micross’ General Manager for Die Distribution in the US, shares DiGangi’s enthusiasm for the new relationship and explains, “Having GeneSiC as a technology partner will be a great advantage for our customers, who, by virtue of their specialty applications, are always pushing performance limits, just like GeneSiC.”
Equipment and Materials
5N Plus to issue $40 million worth of new shares
The agreement made by the provider of group III materials used in the MOCVD industry ,consists of a $20 million public bought‐deal offering and a $20 million concurrent private placement
5N Plus has entered into agreements regarding an equity financing of an aggregate of 12,903,613 units at a price of $3.10 per unit, for aggregate gross proceeds of $40 million.
The firm is a producer of purified metals such as gallium, germanium, indium, selenium and tellurium, which are used in the manufacture of compound semiconductor wafers. 5N Plus is also a provider of inorganic chemicals such as CdTe and CdS used in the solar industry.
5N Plus intends to use the net proceeds from the financing to reduce its indebtedness under its revolving credit facility and for general corporate purposes.
Each unit will be comprised of one common share and one‐half of a common share purchase warrant. Each full warrant will entitle its holder to acquire one additional common share of 5N Plus at a price of $5.00 for 24 months.
In connection with the financing, 5N Plus entered into an agreement with a syndicate of underwriters led by National Bank Financial Inc. The deal is pursuant to the underwriters purchasing, on a
June 2012
www.compoundsemiconductor.net 99
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105