2012 IEEE
Compound Semiconductor IC Symposium INTEGRATED CIRCUITS and DEVICES in
GaAs, InP, GaN, SiGe, and other compound semiconductor and CMOS technologies October 14–17, 2012
Hyatt Regency Hotel at La Jolla, California, USA Sponsored by the IEEE Electron Devices Society
Technically co-sponsored by the Solid State Circuits Society and the Microwave Theory & Techniques Society
BREAKING NEWS - CALL FOR PAPERS 2012 CSIC Symposium
From its beginning in 1978 as the GaAs IC symposium, the IEEE Compound Semiconductor IC Symposium (CSICS) has evolved to become the preeminent international forum for developments in compound semiconductor integrated circuits and devices, embracing GaAs, InP, GaN, SiGe, and more recently CMOS technology. Coverage includes all aspects of the technology, from materials, device fabrication, IC design, testing, and system applications. CSICS provides the ideal forum to present the latest results in high-speed digital, analog, microwave, millimeter wave, THz, mixed-mode, and optoelectronic integrated circuits. First-time papers addressing the utilization and application of InP, GaAs, GaN, silicon, germanium, SiGe, and other compound semiconductors in military and commercial products are invited. Specific technical areas of interest include:
• Innovative device concepts in emerging technologies o Nitrides, InP, III-V on Si, Ge on Si, and 2D crystals: graphene, MoS, BN
• Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS
• Power conversion circuits and technologies • Optoelectronic and photonic devices and ICs • System applications o Wireless handsets and basestations o Vehicular and military RADAR o High-speed digital systems o Fiberoptics and photonics
Camera Ready Paper Submission Deadline Electronic Receipt Only
Close of Business, July 27, 2012
Authors must submit their breaking news paper (not more than 4 pages including figures and other supporting material) of results not previously published or not already accepted by another conference.
The paper must concisely and clearly state: a) The purpose of the work b) What specific new results have been obtained c) How it advances the state-of-the-art or the industry
d) References to prior work
The paper must include: the title, name(s) of the authors(s), organization(s) represented, corresponding authors’ postal and electronic addresses, and telephone and FAX numbers.
All company and governmental clearances must be obtained prior to submission of the abstract.
Authors must submit the camera ready paper electronically using the
www.csics.org web page. Please note that the only accepted file format is PDF. Authors will be informed regarding the results of their submissions by August 10, 2012 for publication in the Symposium Technical Digest.
• Device and circuit modeling / EM and EDA tools • Thermal simulation and advanced packaging of high-power devices and ICs
• Device and IC manufacturing processes, testing methodologies, & reliability
High quality technical papers will be selected from worldwide submissions for oral presentation and publication in the Symposium Digest. Invited papers and panel sessions on topics of current importance to the Compound Semiconductor IC community will complete the program. Extended versions of selected papers from the Symposium will be published in a special issue of the IEEE Journal of Solid State Circuits.
Further questions on abstract submission may be addressed to the Symposium Technical Program Chair:
Francois Colomb Tel: 978-684-5435
fcolomb@raytheon.com
All Symposium information, including paper submission instructions and a link to our paper submission address is available on the CSICS website at:
http://www.csics.org
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