news digest ♦ LEDs
Trinity Material and ARC Energy are paving the way for new industry expectations and opportunities based on c-axis growth orientation for LED manufacturing.
Trinity Material is successfully ramping up to produce very high volumes of sapphire crystals to meet the growing demand for large diameter sapphire wafers in the LED market. “Trinity Material is excited to be a pioneer in China for mass production of CHES sapphire for the LED market,” says Jamin Sheng, chief executive officer for Trinity Material. “We look forward to continuing our strong relationship with ARC Energy, and to utilising ARC Energy’s leading edge CHES furnaces and our strong production capabilities to ramp up production to high volumes so that we can become a worldwide leader in large diameter sapphire.”
ARC Energy’s proprietary and fully automated CHES technology produces c-axis boules that are the optimum orientation for LED applications and, the firm says when compared with conventional a-axis technologies, lead to higher material utilisation and lower overall costs for large diameter sapphire production. “Our unique and flexible c-axis CHES furnaces allow Trinity Material to serve the rapidly expanding demand for large diameter sapphire substrates, ranging from four inches to eight inches. We are pleased to partner with Trinity Material to help them expand their business in the LED marketplace,” adds Rick Schwerdtfeger, co-founder and chief technology officer for ARC Energy.
Forepi orders six more Aixtron reactors for LED production
Four CRIUS II-XL systems in a 19 x 4-inch wafer configuration and two G5 HT reactors in a 14 x 4-inch wafer configuration, will be used for the manufacturing of UHB gallium nitride based blue and white LEDs
Aixtron SE has announced that long-time customer Formosa Epitaxy Inc. (Forepi) has placed a new order for several MOCVD systems.
The order is for four CRIUS II-XL systems in a 19 x 60
www.compoundsemiconductor.net June 2012
4-inch wafer configuration and two G5 HT reactors in a 14 x 4-inch wafer configuration.
The tools will be used for the manufacturing of ultra- high brightness (UHB) GaN-based blue and white LEDs.
Forepi placed the order in the second quarter of 2012 and following their delivery between the third and fourth quarter of 2012, the systems will be installed and commissioned at the company’s new facility in the Pin-Jen industrial zone, Taiwan.
“Forepi began using the CRIUS II-XL system a few months ago and as we must now make provisions for the capacity increase at our new factory in the Pin-Jen industrial zone, we once again turned to Aixtron to provide the epitaxy systems.With short time-to- production and highest performance, throughput and yield, these systems are best suited to our needs,” a spokesperson from Forepi comments. “As we focus on 4-inch substrates, we have great confidence in Aixtron’s cutting edge epitaxy technology.”
Aixtron’s Chief Operating Officer Bernd Schulte, adds, “We are very pleased to once again be able to support one of our longest-standing customers in Taiwan as they continue to expand. An order such as this from Forepi provides further proof of the value of the key features of our equipment, such as seamless process scale-up, excellent uniformity and highest throughput per footprint. All of these factors come together with the most impressive capacity available in today’s equipment market.”
Cree LED module to replace ceramic metal halide lighting
The firm’s new LMH2 device is claimed to deliver unparalleled efficacy and design flexibility and enable up to a five percent increase in system efficacy
Cree is expanding its series of 2000 and 3000 lumen LMH2 module families which deliver lighting manufacturers a new dome lens and universal driver with dimming options.
The new lens enables up to a five percent increase in system efficacy compared to the standard lens
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