news review
TriQuint to speed up GaN power switching
THE DEFENCE ADVANCED RESEARCH PROJECTS AGENCY (DARPA) has entrusted TriQuint with leading a $12.3 million development program focused on ultra-fast GaN switch technology for the Microscale Power Conversion (MPC) program.
TriQuint says its new GaN modulator has the potential to enable highly-efficient RF transmitters substantially smaller than current solutions.
DARPA chose TriQuint as the prime contractor for MPC Technical Area I, which seeks to develop a high-speed, DC-to-DC switch (modulator) and related process technology based on the company’s innovative enhancement-mode GaN transistors.
TriQuint’s technology aims to improve the integration of power switches with advanced RF amplifiers to facilitate ultra- high efficiency, reduced-size amplifiers for radar and communications applications.
As a pioneer in GaN development and research since 1999, TriQuint currently leads multiple GaN process and manufacturing technology initiatives for DARPA including the Nitride Electronic NeXt-Generation Technology (NEXT) program as well as endeavours for the US
Air Force, Army and Naval laboratories. TriQuint is already exploring and bringing derivative devices to market made possible by milestones achieved in its many GaN programs. “The break-through performance demonstrated in ‘NEXT’ has helped us develop new devices, like our GaN power switches, that will open up additional radar and communications applications. We can substantially improve performance in these types of systems,” says TriQuint Vice President and General Manager for Defence Products and Foundry Services, James L. Klein.
The enhancement mode power switching device for the MPC program will be designed to have a blocking voltage of 200 V, ultra-low dynamic on resistance of 1 Ω-mm and a slew rate of 500 V per nanosecond. These capabilities will provide state-of-the-art solid-state technology. RF amplifiers employing these switches will target 75% system efficiency at X-band (8-12 GHz).
TriQuint teamed with Rockwell Collins, the University of Colorado at Boulder and Northrop Grumman, Technical Area II contractors, to create a new generation of RF power amplifiers that use contour modulation for very high efficiency performance that exceeds the capabilities of devices now available.
Dow Corning extends SiC capacity with Aixtron
DOW CORNING has ordered an additional two Aixtron AIX 2800G4 WW planetary reactors for growth on 10 x 100 mm and 6 x 150 mm SiC wafers. The reactors are scheduled to be commissioned in the second quarter of 2012. “Extending our SiC epitaxy capabilities illustrates our commitment to helping our customers grow and succeed and our leadership’s commitment to the business,” says Tom Zoes, Industry Director, Power Electronics business, Dow Corning Corporation.
“Dow Corning’s epitaxy technology on the Aixtron G4 deposition platform provides
our customers with materials capability that enables the creation of high performance, next generation power electronics devices addressing the world’s growing demand for energy efficient solutions.”
Frank Wischmeyer, Vice President and Managing Director of Aixtron AB, Sweden, adds, “We are pleased with the performance of the AIX 2800G4 WW system at Dow Corning. Repeat orders like this are indicators about the quality of our systems and their ability to provide a solid return on investment for our customers.”
Toshiba invests in Bridgelux to make the best 8”GaN- on-Silicon LEDs
JUST MONTHS after they started collaborating, Bridgelux, and Toshiba say they have together achieved the industry’s top class 8” GaN-on-silicon LED square 1.1mm chip emitting 614mW at less than 3.1V at 350mA.
Toshiba has also made an equity investment in Bridgelux with the intent to jointly pursue an innovative technology in the Solid State Lighting (SSL) space.
This investment will further advance both companies’ efforts in the SSL industry, with the view to boost Bridgelux’s GaN-on- Silicon LED chip technology development efforts based on Toshiba’s advanced silicon process and manufacturing technology development efforts.
“Toshiba and Bridgelux have already been engaged in the development of the technology, and the equity investment brings both companies one step closer to a more strategic relationship and achieving our shared goal of driving down the cost of Solid State solutions for the general lighting market,” says Bill Watkins, Bridgelux Chief Executive Officer.
“We are pleased to achieve the best- reported 8” GaN-on-Silicon LED performance through our joint development activities with Bridgelux. We will continue to pursue more advanced development targeting commercialisation of the technology “concludes Makoto Hideshima, Executive Vice President of Semiconductor and Storage Products Company, Corporate Vice President of Toshiba.
June 2012
www.compoundsemiconductor.net 7
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105