Power Electronics ♦ news digest
Today EpiGaN is officially opening its production unit at the Research Campus Hasselt (RCH), located within the knowledge triangle Eindhoven- Leuven-Aachen. EpiGaN found there the necessary framework for installing its cleanroom facilities as required for the production of GaN-on-Silicon, while the location in the heart of Europe allows for establishing their business on an international level. Today, EpiGaN employs 6 people and is currently hiring more engineers and sales personnel to support its growing production effort.
Last year, EpiGaN sampled its first wafers to Europe, US and Asia. The company is now takinga new step in ramping up its capacity. “We are very happy that the current installation will allow us to better serve our customers and new-comers in the field of GaN-on-Silicon market for electronics”, says Marianne Germain, CEO EpiGaN. “This is right at the time that device manufacturers are looking for getting access to this new technology, key for their future applications.” Ingrid Lieten, Vice Minister-President of the Flemish Government, adds, “EpiGaN is an outstanding example of what a strategic research institute can and must encompass: Imec has developed an innovative and state-of-the-art technology, the applications of which can lead to the solution of important challenges for society such as the energy issue and mobility.
This technology has been transferred to EpiGaN. Moreover, this spin-off has a beneficial effect on employment.” About EpiGaN EpiGaN was incorporated in 2010 by Marianne Germain, CEO, Joff Derluyn, CTO, and Stefan Degroote, COO, as a spin-off from imec. In 2011, the company was joined in its venture by a strong consortium of investors, formed by Robert Bosch Venture Capital, Capricorn CleanTech Fund and LRM, enabling the installation of a new production facility. EpiGaN focuses on providing III-nitride epitaxial material solutions for top performance devices. The firm gives device manufacturers access to technology used in market segments such as power supplies for consumables, hybrid electric vehicles, solar inverters, RF power for base stations and smart grid.
EPC enhances its eGaN power with David Reusch
Reusch will be creating benchmark power converter designs and assisting customers in the use of the company’s proprietary gallium nitride FETs for high frequency, high performance power conversion systems
Efficient Power Conversion Corporation (EPC) has recruited David Reusch as its Director of Applications Engineering.
As a member of the EPC applications team, Reusch’s focus will be on designing lower loss and higher power density benchmark circuits that demonstrate the benefits of using transistors.
His initial focus will be on their use in higher voltage DC-DC converters and resonant, soft-switching converters. Reusch’s research and experience in these applications will be shared with customers to accelerate their designs using high performance eGaN FETs. His designs are aimed to demonstrate GaN transistors’ superior performance over MOSFETs.
David Reusch earned a doctorate in electrical engineering from the Virginia Polytechnic Institute and State University (Virginia Tech), where he also earned his bachelor’s and master’s degrees. While working on his Ph.D. he was an NSF Fellow at the Centre for Power Electronics Systems (CPES).
He is active in IEEE organisations and during the last several years has published papers at the Applied Power Electronics Conference (APEC) and the Energy Conversion Congress and Exposition (ECCE
Reusch has also had first-hand experience designing GaN transistors to meet the demands for lower loss and higher power density in power converters.
SemiSouth awarded 30th SiC U.S. patent
The patent allows the silicon carbide innovator to fine tune its vertical channel junction field effect
June 2012
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